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2SA1873-GR(TE85L,F)

Toshiba

2SA1873-GR(TE85L,F) by Toshiba

Toshiba's 2SA1873-GR(TE85L,F) is a PNP transistor with max power dissipation of 0.2W, hFE of 200, and fT of 80MHz. Ideal for surface mount applications in devices requiring low collector current up to 0.15A and operating temperatures up to 125°C.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 16,399 parts In-Stock

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$0.290

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$0.110

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$0.072

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Mouser Electronics

USA . 12,789 parts In-Stock

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$0.290

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$0.111

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$0.072

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$0.045

12,789

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$0.111

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Chip1Stop

Japan . 2,800 parts In-Stock

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$0.302

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$0.275

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VNN

France . 1,009 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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Ampacity Inc.

Singapore . 6,011 parts In-Stock

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$0.500

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Argo Parts USA

USA . 3,521 parts In-Stock

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Continental Prestige Electronics

USA . 1,937 parts In-Stock

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Perfect Parts

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Aranea Global

USA . 500 parts In-Stock

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Overview

Experience the superior quality and reliability of Toshiba with the 2SA1873-GR(TE85L,F) PNP transistor. This versatile component is perfect for a wide range of applications, offering exceptional performance and efficiency. Trust in Toshiba's decades of expertise in semiconductor technology to deliver a product that exceeds expectations. Enhance your projects with the value and benefits this transistor provides, ensuring optimal functionality and durability. Choose Toshiba for unparalleled quality and innovation in the world of electronics.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used for amplifying signals and switching applications, making this product versatile for various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and space in electronic designs.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels, suitable for small to medium electronic devices.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures efficient amplification of current signals, making this transistor reliable for signal processing applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperatures, ideal for applications where heat dissipation is a concern.

Maximum Collector Current (IC): 0.15 A

A maximum collector current of 0.15A allows for handling moderate current levels, suitable for various electronic circuits with low to medium power requirements.

Nominal Transition Frequency (fT): 80 MHz

A high nominal transition frequency of 80 MHz enables fast switching speeds and high-frequency operation, making this transistor suitable for high-speed digital circuits and RF applications.

Technical Specifications

Other Function Transistors 2SA1873-GR(TE85L,F) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

200

Maximum Operating Temperature:

125 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SA1873-GR(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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