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2SA1941-O(Q)

Toshiba

2SA1941-O(Q) by Toshiba

Toshiba's 2SA1941-O(Q) PNP transistor has a max power dissipation of 100W, min hFE of 80, and max IC of 10A. Ideal for high-power applications in circuits requiring a single PNP configuration. Operating temp up to 150°C makes it suitable for various electronic devices.

Median Price

$2.173

Lifecycle Status

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10

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1k+

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Chip1Stop

Japan . 212 parts In-Stock

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$1.710

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$0.897

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$0.848

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Mouser Electronics

USA . 2,208 parts In-Stock

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$3.560

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$1.740

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$1.320

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$1.060

2,208

$3.560

$1.740

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$1.060

DigiKey

USA . 68 parts In-Stock

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$3.740

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$1.706

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$1.288

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$1.144

68

$3.740

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$1.144

RS (Exports)

UK . 310 parts In-Stock

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$2.173

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$2.049

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Verical

USA . 40 parts In-Stock

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$1.884

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Nova Conductors

Japan . 50 parts In-Stock

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$1.347

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Chip Stock

USA . 18,600 parts In-Stock

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VNN

France . 2,423 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Vyrian

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Ampacity Inc.

Singapore . 49 parts In-Stock

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$1.130

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Component Stockers USA

USA . 6,048 parts In-Stock

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$2.210

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$1.340

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$0.730

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Andel Nordic

Denmark . 263 parts In-Stock

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$2.367

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$2.272

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263

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CoreStaff

Japan . 300 parts In-Stock

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$5.937

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$0.895

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$0.851

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$5.937

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Kepictronics

USA . 30,000 parts In-Stock

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Argo Parts USA

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Continental Prestige Electronics

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Netroflash

USA . 100 parts In-Stock

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Perfect Parts

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Assy Fe

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Overview

Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications and can amplify current and carry larger currents than NPN transistors.

Configuration: SINGLE

Single configuration allows for easier circuit design and simplifies the overall setup of the transistor.

Maximum Power Dissipation (Abs): 100 W

The high power dissipation capabilities make this transistor suitable for applications requiring handling of higher power levels without overheating.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures efficient amplification of current and reliable performance in various circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures and operate reliably in demanding environments.

Maximum Collector Current (IC): 10 A

The high maximum collector current allows for handling larger current loads, making this transistor suitable for high-power applications.

Technical Specifications

Other Function Transistors 2SA1941-O(Q) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

80

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA1941-O(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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