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2SA1146

Toshiba

2SA1146 by Toshiba

Toshiba's 2SA1146 PNP transistor offers a max power dissipation of 100W, max collector current of 10A, and min DC current gain of 55. Ideal for applications requiring high-power amplification in electronic circuits with an operating temp up to 140°C.

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Nova Conductors

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VNN

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ECAB

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Ampacity Inc.

Singapore . 840 parts In-Stock

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Kepictronics

USA . 6,800 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Elevate your projects with the 2SA1146 by Toshiba, a high-quality PNP transistor that offers exceptional performance and reliability. As a reputable manufacturer, Toshiba ensures top-notch quality in every product, making this transistor ideal for a wide range of applications. From amplifiers to power supplies, the 2SA1146 delivers superior power dissipation and current gain, guaranteeing optimal performance in any circuit design. Trust Toshiba for cutting-edge technology and elevate your designs with the 2SA1146.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are known for their high current-gain capabilities, making them suitable for amplification applications.

Configuration: SINGLE

Single configuration transistors are simpler to use and can be easily integrated into circuit designs.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation capacity, this transistor can handle higher loads without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 55

A higher DC current gain ensures better amplification capabilities and signal integrity in circuits.

Maximum Operating Temperature: 140 °C

The ability to operate at high temperatures enhances the versatility of the transistor, allowing it to be used in various environments.

Maximum Collector Current (IC): 10 A

High collector current rating provides sufficient capability to drive larger loads, making it suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and mechanical strength, allowing for easy and reliable connections.

Nominal Transition Frequency (fT): 70 MHz

High transition frequency enables the transistor to switch at high speeds, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

Other Function Transistors 2SA1146 attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

55

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

2SA1146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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