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BUD42D-001

Onsemi

BUD42D-001 by Onsemi

BUD42D-001 by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 4A. With a min hFE of 8, it operates up to 150 °C making it ideal for high-power applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 66,000 parts In-Stock

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Vyrian

USA . 4,504 parts In-Stock

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Digiode

USA . 987 parts In-Stock

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AZTECH Wire

Italy . 189 parts In-Stock

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$18.510

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Component Stockers USA

USA . 213 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 4,495 parts In-Stock

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SupplyDigital Components

Austria . 3,615 parts In-Stock

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Corphita

USA . 2,016 parts In-Stock

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Kulean Microsystems

USA . 1,539 parts In-Stock

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Problanco Electronics

Mexico . 1,429 parts In-Stock

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Northwest PG Solutions

USA . 906 parts In-Stock

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Native Components

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Corohmni

South Africa . 475 parts In-Stock

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UHIMA Technologies

Türkiye . 78 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the BUD42D-001 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality and precision engineering in every product. This NPN transistor offers endless possibilities in various applications, providing customers with superior efficiency and power dissipation. Say goodbye to compromise and hello to value with the BUD42D-001, where innovation meets excellence.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and current gain characteristics.

Configuration: SINGLE

Single configuration transistors are easier to handle and integrate into circuits compared to multiple configuration transistors, making them a more straightforward choice for many applications.

Maximum Power Dissipation (Abs): 25 W

With a high maximum power dissipation of 25W, this transistor can handle high power applications without the risk of overheating or damage.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures reliable amplification of input signals, making this transistor suitable for use in various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without performance degradation, providing reliability in diverse operating environments.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4A allows this transistor to handle high current loads with ease, making it suitable for power applications that require high current capabilities.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, making it easier to solder the transistor onto circuit boards for secure connections.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C ensures that the solder joints remain intact during the soldering process, preventing any potential damage to the transistor.

Technical Specifications

Other Function Transistors BUD42D-001 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trade Compliance

BUD42D-001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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