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BUD43BK

Onsemi

BUD43BK by Onsemi

BUD43BK by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 2A. With a min DC current gain of 6, it operates up to 150 °C making it suitable for various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,347 parts In-Stock

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Vyrian

USA . 1,255 parts In-Stock

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Native Components

USA . 688 parts In-Stock

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$32.630

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$31.325

688

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$31.325

Northwest PG Solutions

USA . 325 parts In-Stock

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$35.893

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325

$35.893

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SupplyDigital Components

Austria . 6,966 parts In-Stock

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Kulean Microsystems

USA . 6,177 parts In-Stock

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Problanco Electronics

Mexico . 5,802 parts In-Stock

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TANS Electronics

Latvia . 4,262 parts In-Stock

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Corphita

USA . 2,196 parts In-Stock

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Corohmni

South Africa . 159 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Overview

Experience the superior quality of the Onsemi BUD43BK NPN transistor! Manufactured by industry leader Onsemi, this single configuration transistor offers a maximum power dissipation of 25W and a maximum collector current of 2A, making it ideal for a wide range of applications. From amplifiers to power supplies, this transistor delivers reliable performance and efficiency. Trust in Onsemi's reputation for excellence and elevate your projects with the BUD43BK transistor today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for a wide range of electronic projects.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to integrate this transistor into existing electronic systems.

Maximum Power Dissipation (Abs): 25 W

With a high maximum power dissipation, this transistor can handle large amounts of power without overheating, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 indicates good amplification capabilities, allowing this transistor to effectively amplify signals in various electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures that this transistor can function efficiently even in elevated temperature environments, enhancing its reliability and durability.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle high current loads, making it suitable for applications that require robust power handling capabilities.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good conductivity and solderability, facilitating easy and reliable connections in circuit assemblies.

Technical Specifications

Other Function Transistors BUD43BK attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BUD43BK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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