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BUD43BW

Onsemi

BUD43BW by Onsemi

BUD43BW by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 2A. It operates at up to 150 °C, making it suitable for high-temperature applications. This surface-mount device has a min DC current gain of 6, ideal for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,971 parts In-Stock

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Vyrian

USA . 310 parts In-Stock

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310

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Distributors (Availability)

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Native Components

USA . 88 parts In-Stock

1+ parts

$365.900

100+ parts

$358.582

1k+ parts

$354.923

10k+ parts

$351.264

88

$365.900

$358.582

$354.923

$351.264

Northwest PG Solutions

USA . 2,238 parts In-Stock

1+ parts

$402.490

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$402.490

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Problanco Electronics

Mexico . 7,835 parts In-Stock

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7,835

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Kulean Microsystems

USA . 4,509 parts In-Stock

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4,509

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TANS Electronics

Latvia . 4,402 parts In-Stock

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4,402

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SupplyDigital Components

Austria . 3,360 parts In-Stock

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Corphita

USA . 2,280 parts In-Stock

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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Corohmni

South Africa . 400 parts In-Stock

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Overview

Experience superior performance and reliability with the BUD43BW by Onsemi. As a leader in semiconductor manufacturing, Onsemi ensures top-notch quality and innovation in every product. The BUD43BW is a versatile NPN transistor that offers high power dissipation, low DC current gain, and a wide operating temperature range, making it ideal for a variety of applications. Trust Onsemi to deliver cutting-edge technology and unmatched value in the BUD43BW, providing you with the advantage you need for your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile in various electronic circuits.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into circuits, making it easier to work with.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly on printed circuit boards, saving time and space in electronic devices.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation rating, this transistor can handle significant amounts of power, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures reliable and consistent amplification of signals in electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for use in a wide range of environments without risking overheating or thermal damage.

Maximum Collector Current (IC): 2 A

The high maximum collector current rating of 2A enables this transistor to handle large currents, making it suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and reliability in the assembly process, ensuring secure connections and long-term performance.

Technical Specifications

Other Function Transistors BUD43BW attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BUD43BW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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