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NJW44H11G

Onsemi

NJW44H11G by Onsemi

NJW44H11G by Onsemi is an NPN transistor with a max power dissipation of 120W and a min DC current gain of 80. It can handle a max collector current of 10A and operates at temperatures up to 150 °C. Ideal for applications requiring high-power amplification in electronic circuits.

Median Price

$2.020

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 241 parts In-Stock

1+ parts

$3.710

100+ parts

$2.026

1k+ parts

$1.383

10k+ parts

$1.221

241

$3.710

$2.026

$1.383

$1.221

Mouser Electronics

USA . 82 parts In-Stock

1+ parts

$3.710

100+ parts

-

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-

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-

82

$3.710

-

-

-

Rochester

USA . 7,225 parts In-Stock

1+ parts

-

100+ parts

$1.230

1k+ parts

$1.100

10k+ parts

$1.030

7,225

-

$1.230

$1.100

$1.030

Verical

USA . 2,939 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.375

10k+ parts

$1.288

2,939

-

-

$1.375

$1.288

Flip Electronics (Authorized)

USA . 1,140 parts In-Stock

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-

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1,140

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Master Electronics

USA . 270 parts In-Stock

1+ parts

-

100+ parts

$2.020

1k+ parts

$1.360

10k+ parts

$1.190

270

-

$2.020

$1.360

$1.190

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 665 parts In-Stock

1+ parts

$1.292

100+ parts

-

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665

$1.292

-

-

-

Flip Electronics

USA . 4,050 parts In-Stock

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4,050

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Vyrian

USA . 2,893 parts In-Stock

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2,893

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IBS Electronics

USA . 270 parts In-Stock

1+ parts

-

100+ parts

$2.833

1k+ parts

$1.907

10k+ parts

$1.669

270

-

$2.833

$1.907

$1.669

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 361 parts In-Stock

1+ parts

$1.224

100+ parts

-

1k+ parts

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361

$1.224

-

-

-

Corohmni

South Africa . 295 parts In-Stock

1+ parts

$1.280

100+ parts

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295

$1.280

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Continental Prestige Electronics

USA . 6,359 parts In-Stock

1+ parts

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100+ parts

$1.460

1k+ parts

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6,359

-

$1.460

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TANS Electronics

Latvia . 6,280 parts In-Stock

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6,280

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Problanco Electronics

Mexico . 5,695 parts In-Stock

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5,695

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Kulean Microsystems

USA . 2,662 parts In-Stock

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2,662

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SupplyDigital Components

Austria . 1,291 parts In-Stock

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1,291

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UHIMA Technologies

Türkiye . 741 parts In-Stock

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741

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Overview

Enhance your electronic projects with the NJW44H11G by Onsemi, a high-quality NPN transistor that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this transistor is ideal for a wide range of applications. From amplifiers to power supplies, the NJW44H11G offers customers unparalleled value, efficiency, and versatility. Trust Onsemi to provide you with the best in transistor technology for all your circuit design needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and wiring, making it easier to integrate this transistor into different electronic systems.

Maximum Power Dissipation (Abs): 120 W

High power dissipation capability allows this transistor to handle heavy loads without overheating, ensuring reliable operation in demanding conditions.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures efficient amplification of signals with minimal distortion, making this transistor suitable for audio and radio frequency applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in elevated temperature environments, increasing the reliability and longevity of electronic devices using this transistor.

Maximum Collector Current (IC): 10 A

High collector current rating allows this transistor to handle large current flows, making it suitable for power switching applications in electronic circuits.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections for the transistor in various electronic assemblies.

Technical Specifications

Other Function Transistors NJW44H11G attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Trade Compliance

NJW44H11G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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