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2SC4731S-AY

Onsemi

2SC4731S-AY by Onsemi

2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

Median Price

$1.069

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.030

1k+ parts

$0.855

10k+ parts

$0.762

2,000

-

$1.030

$0.855

$0.762

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

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$1.290

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2,000

-

-

$1.290

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Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

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$1.069

10k+ parts

$0.953

2,000

-

-

$1.069

$0.953

Distributors (In-Stock)

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Digiode

USA . 626 parts In-Stock

1+ parts

$0.803

100+ parts

-

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626

$0.803

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Chip Stock

USA . 47,000 parts In-Stock

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47,000

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Vyrian

USA . 6,966 parts In-Stock

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6,966

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,738 parts In-Stock

1+ parts

$0.670

100+ parts

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1,738

$0.670

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Corphita

USA . 1,963 parts In-Stock

1+ parts

$0.760

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1,963

$0.760

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Corohmni

South Africa . 473 parts In-Stock

1+ parts

$0.792

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473

$0.792

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Component Stockers USA

USA . 2,907 parts In-Stock

1+ parts

$0.870

100+ parts

$0.820

1k+ parts

$0.740

10k+ parts

-

2,907

$0.870

$0.820

$0.740

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AZTECH Wire

Italy . 524 parts In-Stock

1+ parts

$18.680

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524

$18.680

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Microchip USA

USA . 7,270 parts In-Stock

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7,270

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SupplyDigital Components

Austria . 7,148 parts In-Stock

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TANS Electronics

Latvia . 6,003 parts In-Stock

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6,003

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Problanco Electronics

Mexico . 2,257 parts In-Stock

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2,257

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Continental Prestige Electronics

USA . 2,000 parts In-Stock

1+ parts

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$0.763

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2,000

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$0.763

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UHIMA Technologies

Türkiye . 926 parts In-Stock

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926

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Native Components

USA . 489 parts In-Stock

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489

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Northwest PG Solutions

USA . 473 parts In-Stock

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473

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Kulean Microsystems

USA . 249 parts In-Stock

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249

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Overview

Elevate your electronics projects with the reliable 2SC4731S-AY NPN transistor by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi transistors are a favorite among industry professionals. This versatile component is ideal for a wide range of applications, offering excellent performance and durability. Whether you're a seasoned engineer or a DIY enthusiast, the 2SC4731S-AY guarantees value, efficiency, and reliability in every use. Upgrade your designs today with Onsemi's top-of-the-line transistor!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a variety of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making it easier to use in projects.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle higher power loads without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 140

A higher DC current gain allows for better amplification of signals, making this transistor suitable for applications requiring signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate effectively in a wide range of environmental conditions.

Maximum Collector Current (IC): 4 A

With a high collector current rating, this transistor can handle larger current flows, making it suitable for applications that require high current switching.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The variety of terminal finish options ensures good electrical conductivity and corrosion resistance, making this transistor reliable for long-term use.

Technical Specifications

Other Function Transistors 2SC4731S-AY attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

2SC4731S-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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