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2SC4003E

Onsemi

2SC4003E by Onsemi

2SC4003E by Onsemi is an NPN transistor with a max power dissipation of 10W and min DC current gain of 100. It operates at temperatures up to 150 °C, making it suitable for various applications requiring a collector current of up to 0.2A in surface-mount configurations.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,111 parts In-Stock

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Vyrian

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Native Components

USA . 111 parts In-Stock

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$9.329

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Northwest PG Solutions

USA . 492 parts In-Stock

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$9.236

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 6,335 parts In-Stock

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TANS Electronics

Latvia . 4,301 parts In-Stock

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Problanco Electronics

Mexico . 2,649 parts In-Stock

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Corphita

USA . 1,606 parts In-Stock

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UHIMA Technologies

Türkiye . 720 parts In-Stock

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Corohmni

South Africa . 471 parts In-Stock

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SupplyDigital Components

Austria . 454 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi 2SC4003E transistor. Built by a reputable manufacturer, this NPN transistor offers reliability and quality like no other. Whether used in amplifiers, switching circuits, or voltage regulators, the 2SC4003E delivers exceptional performance and efficiency. With a maximum power dissipation of 10W and a minimum DC current gain of 100, this transistor is designed to meet your needs. Experience the value and benefits of this product today and take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for various applications requiring signal amplification.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into electronic systems.

Surface Mount: YES

Surface mount capability enables easy and secure PCB assembly, saving space and reducing overall system size.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capacity allows this transistor to handle moderate power applications reliably.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient signal amplification and overall stability in circuit operations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150 °C ensures reliable performance in varying environmental conditions.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current loads in various circuit configurations.

Technical Specifications

Other Function Transistors 2SC4003E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC4003E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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