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2SC4080C

Onsemi

2SC4080C by Onsemi

The Onsemi 2SC4080C is an NPN transistor with a max power dissipation of 0.5W, hFE of 40, and fT of 400MHz. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its surface-mount capability and max collector current of 0.2A at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,558 parts In-Stock

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Digiode

USA . 1,086 parts In-Stock

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Northwest PG Solutions

USA . 1,810 parts In-Stock

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$3.322

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TANS Electronics

Latvia . 7,801 parts In-Stock

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Problanco Electronics

Mexico . 5,461 parts In-Stock

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Kulean Microsystems

USA . 2,819 parts In-Stock

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SupplyDigital Components

Austria . 2,418 parts In-Stock

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Corphita

USA . 790 parts In-Stock

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Native Components

USA . 327 parts In-Stock

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UHIMA Technologies

Türkiye . 184 parts In-Stock

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Corohmni

South Africa . 50 parts In-Stock

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Overview

Enhance your electronic projects with the 2SC4080C by Onsemi, a high-quality NPN transistor that offers reliable performance and versatility. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a wide range of applications in electronics. With a maximum power dissipation of 0.5W and a minimum DC current gain of 40, this transistor provides exceptional value and benefits to customers looking for efficient and durable components. Upgrade your designs with the 2SC4080C and experience the advantages of top-notch quality and performance.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are known for their high input impedance and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easier to work with and require less circuitry compared to dual or multiple configurations, making them more cost-effective and space-efficient.

Surface Mount: YES

Surface mount transistors are compact and allow for densely packed circuit boards, saving space and reducing overall product size.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power requirements while still maintaining efficiency and reliability.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures that the transistor can provide sufficient amplification for various applications without external amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments and maintain stable performance under stress.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A allows for reliable and efficient operation in low to moderate current applications, making it suitable for a wide range of uses.

Nominal Transition Frequency (fT): 400 MHz

With a nominal transition frequency of 400MHz, this transistor can deliver high-speed switching performance, making it ideal for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Other Function Transistors 2SC4080C attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC4080C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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