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2SC4003D(TP-FA)

Onsemi

2SC4003D(TP-FA) by Onsemi

2SC4003D(TP-FA) by Onsemi is an NPN transistor with a max power dissipation of 10W and min DC current gain of 60. It operates at up to 150 °C, making it suitable for various applications requiring a collector current of up to 0.2A in a surface-mount configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,890 parts In-Stock

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1,890

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Digiode

USA . 819 parts In-Stock

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819

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Distributors (Availability)

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Native Components

USA . 211 parts In-Stock

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$0.329

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$0.316

211

$0.329

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$0.316

Northwest PG Solutions

USA . 1,229 parts In-Stock

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$0.362

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$0.319

1,229

$0.362

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$0.319

Problanco Electronics

Mexico . 8,093 parts In-Stock

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8,093

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TANS Electronics

Latvia . 6,062 parts In-Stock

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Kulean Microsystems

USA . 5,854 parts In-Stock

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5,854

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SupplyDigital Components

Austria . 4,156 parts In-Stock

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Corphita

USA . 1,841 parts In-Stock

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Corohmni

South Africa . 474 parts In-Stock

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC4003D(TP-FA) transistor by Onsemi. Renowned for their top-notch quality and reliability, Onsemi brings you a cutting-edge product designed to elevate your electronic projects to new heights. Ideal for a wide range of applications, this NPN transistor offers superior performance and efficiency. Experience seamless integration, maximum power dissipation, and exceptional durability with the 2SC4003D(TP-FA). Upgrade your technology game today and unlock endless possibilities with Onsemi's state-of-the-art transistor.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for a variety of circuit needs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient soldering onto circuit boards, saving time and space in assembly.

Maximum Power Dissipation (Abs): 10 W

With a high maximum power dissipation, this transistor can handle high power applications without risk of overheating.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures reliable and consistent amplification performance in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for usage in demanding environments without risking damage to the transistor.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2 A enables the transistor to handle moderate current loads, suitable for many applications.

Technical Specifications

Other Function Transistors 2SC4003D(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC4003D(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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