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2SC4080

Onsemi

2SC4080 by Onsemi

The Onsemi 2SC4080 is an NPN transistor with a max power dissipation of 1.3W, min DC current gain of 40, and max collector current of 0.1A. Ideal for single configuration applications requiring surface mount technology in other function transistors.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,169 parts In-Stock

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Vyrian

USA . 383 parts In-Stock

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Native Components

USA . 157 parts In-Stock

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$1.375

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Northwest PG Solutions

USA . 1,230 parts In-Stock

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$1.512

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TANS Electronics

Latvia . 6,883 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,333 parts In-Stock

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SupplyDigital Components

Austria . 4,180 parts In-Stock

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Corphita

USA . 2,048 parts In-Stock

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Kulean Microsystems

USA . 1,084 parts In-Stock

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Corohmni

South Africa . 306 parts In-Stock

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UHIMA Technologies

Türkiye . 223 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2SC4080 NPN transistor. Crafted by a trusted manufacturer, this single configuration transistor offers reliability and efficiency like no other. Ideal for a variety of applications, this transistor provides a seamless experience for your electronic projects. Whether you're a hobbyist or a professional, the 2SC4080 delivers superior performance with a minimum DC current gain of 40 and a maximum collector current of 0.1A. Elevate your creations with the quality and precision of Onsemi's 2SC4080 transistor.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in low-power amplification and switching circuits, making this product versatile and widely compatible.

Configuration: SINGLE

Single configuration simplifies circuit design and improves overall reliability of the product.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic devices.

Maximum Power Dissipation (Abs): 1.3 W

High maximum power dissipation ensures that the transistor can handle moderate power levels without overheating, increasing its longevity and performance.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capability, making this transistor suitable for signal amplification applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor is ideal for low-power applications where precise current control is required.

Technical Specifications

Other Function Transistors 2SC4080 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC4080 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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