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2SC4080D

Onsemi

2SC4080D by Onsemi

The Onsemi 2SC4080D is an NPN transistor with a max power dissipation of 0.5W, hFE of 60, and fT of 400MHz. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its surface mount capability and max collector current of 0.2A.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,152 parts In-Stock

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Digiode

USA . 128 parts In-Stock

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Native Components

USA . 570 parts In-Stock

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$1.496

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Northwest PG Solutions

USA . 1,965 parts In-Stock

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$1.645

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TANS Electronics

Latvia . 4,535 parts In-Stock

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Kulean Microsystems

USA . 4,189 parts In-Stock

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SupplyDigital Components

Austria . 3,318 parts In-Stock

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Problanco Electronics

Mexico . 2,668 parts In-Stock

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Corphita

USA . 2,182 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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UHIMA Technologies

Türkiye . 117 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC4080D by Onsemi, a high-quality NPN transistor that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this transistor is designed for a wide range of applications in electronics, telecommunications, and industrial control systems. With its single configuration and surface mount capability, the 2SC4080D delivers exceptional value and benefits to customers looking for a reliable solution for their projects. Trust Onsemi to provide you with superior quality and performance, unleash your creativity with the 2SC4080D today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for audio applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the product easier to integrate into existing systems.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and saves space in compact designs.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this product can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures reliable amplification performance in various circuit applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C provides tolerance for temperature fluctuations and ensures product reliability.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2A, this transistor is suitable for low to moderate current applications.

Nominal Transition Frequency (fT): 400 MHz

A high nominal transition frequency of 400MHz allows for fast switching speeds and high-frequency operation, making the product ideal for RF applications.

Technical Specifications

Other Function Transistors 2SC4080D attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC4080D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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