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2SC4027R(TP)

Onsemi

2SC4027R(TP) by Onsemi

2SC4027R(TP) by Onsemi is an NPN transistor with a max power dissipation of 15W and max collector current of 1.5A. It has a min DC current gain of 100, making it suitable for high-power applications in circuits requiring a single NPN configuration. Operating up to 150 °C, it's ideal for industrial and automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,284 parts In-Stock

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Vyrian

USA . 1,587 parts In-Stock

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1,587

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SupplyDigital Components

Austria . 8,263 parts In-Stock

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Problanco Electronics

Mexico . 3,907 parts In-Stock

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Kulean Microsystems

USA . 3,814 parts In-Stock

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TANS Electronics

Latvia . 2,637 parts In-Stock

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Northwest PG Solutions

USA . 785 parts In-Stock

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UHIMA Technologies

Türkiye . 646 parts In-Stock

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646

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Corohmni

South Africa . 446 parts In-Stock

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Native Components

USA . 429 parts In-Stock

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Corphita

USA . 336 parts In-Stock

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Overview

Unlock the power of innovation with the 2SC4027R(TP) by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality transistors designed to meet the demands of various applications. Whether you're looking to enhance your electronic devices or streamline your production processes, this NPN transistor offers exceptional performance and reliability. With a maximum power dissipation of 15W and a minimum DC current gain of 100, the 2SC4027R(TP) is the perfect solution for your needs. Trust Onsemi to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are popular for their high efficiency and fast switching speeds, making this product suitable for applications requiring quick response times.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces potential points of failure, enhancing the reliability of the product.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this product can handle heavy loads and ensure stable performance even under high power conditions.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and reliable amplification of signals, making this product suitable for precision applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperatures, making it suitable for demanding industrial environments.

Maximum Collector Current (IC): 1.5 A

The high maximum collector current ensures that this product can handle high current loads without overheating or malfunctioning, making it a reliable choice for power applications.

Technical Specifications

Other Function Transistors 2SC4027R(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC4027R(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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