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2SC4080E

Onsemi

2SC4080E by Onsemi

Onsemi's 2SC4080E NPN transistor offers a max power dissipation of 0.5W, hFE of 100, and fT of 400MHz. Ideal for applications requiring a single-channel configuration in surface-mount setups, with a max collector current of 0.2A and operating temp up to 150 °C.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 1,939 parts In-Stock

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Vyrian

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Prism Electronics

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TANS Electronics

Latvia . 5,875 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 1,399 parts In-Stock

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Native Components

USA . 986 parts In-Stock

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UHIMA Technologies

Türkiye . 938 parts In-Stock

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Corphita

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SupplyDigital Components

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Corohmni

South Africa . 227 parts In-Stock

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Northwest PG Solutions

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Overview

Discover the power of innovation with the Onsemi 2SC4080E transistor. With a focus on quality and reliability, Onsemi is a trusted manufacturer known for delivering top-notch electronic components. The 2SC4080E is a versatile NPN transistor suitable for a wide range of applications, from amplifiers to signal processing circuits. Experience superior performance and efficiency with this single configuration transistor that offers a high DC current gain and low power dissipation. Unlock new possibilities in your projects with the Onsemi 2SC4080E.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and suitable for a wide range of electronic projects.

Configuration: SINGLE

Single configuration makes installation and circuit design simpler, reducing complexity and potential points of failure.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto circuit boards, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 W, this transistor can handle moderate power levels, suitable for many general purpose applications.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain indicates good amplification capabilities, ensuring reliable signal processing and amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 400 MHz

The high nominal transition frequency of 400 MHz indicates good high-frequency performance, making this transistor suitable for applications requiring fast signal switching or amplification.

Technical Specifications

Other Function Transistors 2SC4080E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC4080E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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