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2SC4027S(TP)

Onsemi

2SC4027S(TP) by Onsemi

2SC4027S(TP) by Onsemi is an NPN transistor with a max power dissipation of 15W, hFE of 140, and IC of 1.5A. It is used in various applications due to its single configuration, operating up to 150 °C, making it suitable for power amplification circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,215 parts In-Stock

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Digiode

USA . 1,363 parts In-Stock

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1,363

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Distributors (Availability)

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Native Components

USA . 745 parts In-Stock

1+ parts

$21.440

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745

$21.440

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Northwest PG Solutions

USA . 784 parts In-Stock

1+ parts

$23.584

100+ parts

$21.226

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784

$23.584

$21.226

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Kulean Microsystems

USA . 4,284 parts In-Stock

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4,284

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SupplyDigital Components

Austria . 3,701 parts In-Stock

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3,701

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Problanco Electronics

Mexico . 2,599 parts In-Stock

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2,599

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TANS Electronics

Latvia . 1,051 parts In-Stock

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1,051

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Corphita

USA . 991 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 322 parts In-Stock

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322

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Overview

Unleash the power of innovation with the 2SC4027S(TP) by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products like this NPN transistor that offers exceptional performance and reliability. Ideal for a wide range of applications, this transistor provides customers with unmatched value and benefits. Whether you're looking to amplify signals or regulate current flow, the 2SC4027S(TP) is the perfect choice for your electronic projects. Trust Onsemi to bring your designs to life with cutting-edge technology and superior components.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a variety of applications.

Configuration: SINGLE

A single configuration simplifies the circuit design and makes the product easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this product can handle high-power applications without overheating or failing.

Minimum DC Current Gain (hFE): 140

A higher DC current gain means the transistor can provide more amplification, leading to improved performance in signal processing circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without performance degradation, ensuring reliability in harsh environments.

Maximum Collector Current (IC): 1.5 A

The high maximum collector current allows this transistor to handle large current loads, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors 2SC4027S(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC4027S(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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