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2SC4003

Onsemi

2SC4003 by Onsemi

The Onsemi 2SC4003 is an NPN transistor with a max power dissipation of 10W, min DC current gain of 60, and max collector current of 0.2A. It is used in applications requiring a single configuration for surface mount technology, operating up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,830 parts In-Stock

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1,830

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Digiode

USA . 137 parts In-Stock

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137

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Distributors (Availability)

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Native Components

USA . 410 parts In-Stock

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$70.080

100+ parts

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$67.277

410

$70.080

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$67.277

Northwest PG Solutions

USA . 313 parts In-Stock

1+ parts

$77.088

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313

$77.088

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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TANS Electronics

Latvia . 7,275 parts In-Stock

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7,275

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Problanco Electronics

Mexico . 6,635 parts In-Stock

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6,635

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Kulean Microsystems

USA . 6,169 parts In-Stock

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6,169

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SupplyDigital Components

Austria . 2,133 parts In-Stock

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2,133

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Corphita

USA . 1,504 parts In-Stock

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1,504

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Corohmni

South Africa . 364 parts In-Stock

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364

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UHIMA Technologies

Türkiye . 315 parts In-Stock

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315

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Overview

Enhance your electronic projects with the 2SC4003 transistor by Onsemi, a trusted manufacturer known for their high-quality components. This NPN transistor offers reliable performance in various applications, from amplifiers to power supplies. With a maximum power dissipation of 10W and a minimum DC current gain of 60, this transistor provides efficiency and durability. Trust Onsemi's expertise to deliver exceptional products that meet your needs and exceed your expectations. Upgrade your projects today with the 2SC4003 for superior performance and reliability.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors have high input impedance and low output impedance, making them suitable for amplification and switching circuits.

Configuration: SINGLE

Single configuration transistors are easier to use in simple circuits and offer straightforward implementation.

Surface Mount: YES

Surface mount transistors are space-saving and allow for automated assembly processes, making them ideal for compact electronic devices.

Maximum Power Dissipation (Abs): 10 W

With a high maximum power dissipation of 10W, this transistor can handle high power applications without overheating.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures proper amplification and signal strength in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments and remain reliable.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A allows this transistor to handle moderate current loads, making it versatile for various applications.

Technical Specifications

Other Function Transistors 2SC4003 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC4003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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