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2SC4027S(TP-FA)

Onsemi

2SC4027S(TP-FA) by Onsemi

Onsemi's 2SC4027S(TP-FA) NPN transistor offers a max power dissipation of 15W, hFE of 140, and IC of 1.5A. Ideal for applications requiring a single configuration in surface mount technology, with an operating temp up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,474 parts In-Stock

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Vyrian

USA . 51 parts In-Stock

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Native Components

USA . 546 parts In-Stock

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$1.270

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546

$1.270

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Northwest PG Solutions

USA . 1,890 parts In-Stock

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$1.397

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$1.397

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Kulean Microsystems

USA . 3,297 parts In-Stock

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TANS Electronics

Latvia . 2,860 parts In-Stock

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SupplyDigital Components

Austria . 2,013 parts In-Stock

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Corphita

USA . 1,287 parts In-Stock

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UHIMA Technologies

Türkiye . 438 parts In-Stock

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Problanco Electronics

Mexico . 372 parts In-Stock

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Corohmni

South Africa . 98 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's 2SC4027S(TP-FA) transistor. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation to meet all your electronic component needs. The 2SC4027S(TP-FA) is perfect for a wide range of applications, offering high performance and efficiency. Trust in the value and benefits this transistor provides, ensuring optimal functionality and durability for your projects. Upgrade your electronics with Onsemi's 2SC4027S(TP-FA) and experience unmatched quality today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are known for their low noise and high efficiency, making this product a good choice for reliable performance.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate this transistor into various electronic applications.

Surface Mount: YES

Surface mount transistors save space and facilitate automated assembly processes, making them ideal for compact electronic devices and mass production.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation ensures that the transistor can handle high power applications without overheating, making it a reliable choice for demanding tasks.

Minimum DC Current Gain (hFE): 140

A high minimum DC current gain ensures that the transistor provides consistent amplification of signals, making it suitable for audio and radio frequency applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function in a wide range of environmental conditions, making it versatile and reliable in various applications.

Maximum Collector Current (IC): 1.5 A

The high maximum collector current allows the transistor to handle higher current loads, making it suitable for power amplification and switching applications.

Technical Specifications

Other Function Transistors 2SC4027S(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC4027S(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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