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2SC4027R(TP-FA)

Onsemi

2SC4027R(TP-FA) by Onsemi

2SC4027R(TP-FA) by Onsemi is an NPN transistor with a max power dissipation of 15W and max collector current of 1.5A. With a min DC current gain of 100, it operates up to 150 °C, making it suitable for various electronic applications requiring high power handling in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,564 parts In-Stock

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Digiode

USA . 741 parts In-Stock

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741

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Distributors (Availability)

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Native Components

USA . 511 parts In-Stock

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$0.600

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511

$0.600

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Northwest PG Solutions

USA . 763 parts In-Stock

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$0.660

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763

$0.660

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Problanco Electronics

Mexico . 8,265 parts In-Stock

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8,265

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Kulean Microsystems

USA . 6,027 parts In-Stock

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6,027

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SupplyDigital Components

Austria . 5,438 parts In-Stock

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5,438

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TANS Electronics

Latvia . 5,155 parts In-Stock

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Corphita

USA . 1,478 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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UHIMA Technologies

Türkiye . 153 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC4027R(TP-FA) by Onsemi. Designed for top-tier performance, this NPN transistor is a game-changer in its category. With a maximum power dissipation of 15W and a minimum DC current gain of 100, this transistor offers unparalleled reliability and efficiency. Ideal for a wide range of applications, from industrial automation to consumer electronics, this product delivers exceptional value and benefits to customers seeking cutting-edge technology. Elevate your projects with the quality and advantages of Onsemi's 2SC4027R(TP-FA).

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplifying signals in electronic circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easier to work with and integrate into circuits, simplifying the design and reducing potential points of failure in the system.

Surface Mount: YES

Surface mount transistors are smaller and lighter than through-hole components, making them ideal for compact devices and improving overall efficiency.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle larger loads and operate at higher power levels without the risk of overheating or damage.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures efficient signal amplification and reliable performance in electronic circuits, providing consistent results.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, making it suitable for use in environments where heat dissipation is a concern.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle moderate to high current loads, making it suitable for a wide range of applications that require robust performance.

Technical Specifications

Other Function Transistors 2SC4027R(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC4027R(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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