Loading...

2SC4080F

Onsemi

2SC4080F by Onsemi

The Onsemi 2SC4080F is an NPN transistor with a max power dissipation of 0.5W and min DC current gain of 160. It operates at up to 150 °C, with a max collector current of 0.2A and transition frequency of 400MHz. Ideal for applications requiring high-speed switching in surface-mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,704 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,704

-

-

-

-

Digiode

USA . 1,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,310

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 907 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

-

10k+ parts

$0.106

907

$0.110

-

-

$0.106

Northwest PG Solutions

USA . 2,202 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

$0.107

2,202

$0.121

-

-

$0.107

Problanco Electronics

Mexico . 6,398 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,398

-

-

-

-

TANS Electronics

Latvia . 5,220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,220

-

-

-

-

SupplyDigital Components

Austria . 4,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,986

-

-

-

-

Corphita

USA . 1,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,107

-

-

-

-

UHIMA Technologies

Türkiye . 437 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

437

-

-

-

-

Kulean Microsystems

USA . 416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

416

-

-

-

-

Corohmni

South Africa . 398 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

398

-

-

-

-

Overview

Elevate your electronic projects with the 2SC4080F by Onsemi, a high-quality NPN transistor that delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a variety of applications in the electronics field. With a maximum power dissipation of 0.5W and a minimum DC current gain (hFE) of 160, this transistor offers unmatched value and efficiency. Experience the benefits of using the 2SC4080F in your next project and see the difference it can make.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in electronic projects.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB design, saving space and making it suitable for smaller electronic devices.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels, suitable for many common electronic applications.

Minimum DC Current Gain (hFE): 160

A minimum DC current gain of 160 ensures reliable amplification of signals, making this product ideal for use in amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, ensuring stable performance in various environments.

Maximum Collector Current (IC): 0.2 A

A maximum collector current of 0.2A allows for handling of moderate current levels, making this product suitable for switching applications.

Nominal Transition Frequency (fT): 400 MHz

With a high transition frequency of 400MHz, this transistor is capable of fast switching speeds, making it ideal for high-frequency applications such as RF circuits.

Technical Specifications

Other Function Transistors 2SC4080F attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

160

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC4080F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20