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MCH6331-TL-E

Onsemi

MCH6331-TL-E by Onsemi

The Onsemi MCH6331-TL-E is a P-CHANNEL FET with 3.5A ID and 1.5W power dissipation in ENHANCEMENT MODE. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic circuits requiring high drain current capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,755 parts In-Stock

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Flip Electronics

USA . 2,100 parts In-Stock

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Digiode

USA . 1,894 parts In-Stock

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AZTECH Wire

Italy . 1,002 parts In-Stock

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$11.660

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Component Stockers USA

USA . 307 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,700 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 8,341 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 2,880 parts In-Stock

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Assy Fe

Spain . 2,880 parts In-Stock

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GreenTree Electronics

Israel . 1,993 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 966 parts In-Stock

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TANS Electronics

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SupplyDigital Components

Austria . 221 parts In-Stock

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Corphita

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Corohmni

South Africa . 53 parts In-Stock

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Overview

Unleash the power of innovation with the MCH6331-TL-E by Onsemi! Crafted with precision and expertise, this P-CHANNEL transistor offers unparalleled performance and reliability. Whether you're designing cutting-edge electronics or upgrading existing systems, this enhancement mode transistor is your go-to solution. With a maximum drain current of 3.5 A and a maximum power dissipation of 1.5 W, the possibilities are endless. Elevate your projects with the superior quality and advanced technology that Onsemi provides. Choose the MCH6331-TL-E and experience the difference for yourself.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their lower ON resistance compared to N-channel transistors, making them ideal for high side switching applications.

Configuration: SINGLE

Single configuration transistors are easier to design with and are commonly used in simpler circuits.

Surface Mount: YES

Surface mount transistors are compact and are ideal for densely packed circuit boards, saving space and reducing overall size of the device.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors can be turned on and off easily using a control voltage, providing greater control over the circuit operation.

Maximum Drain Current (Abs) (ID): 3.5 A

A high maximum drain current allows for the transistor to handle higher power applications without the risk of overheating or failing.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle higher power levels while maintaining stable operation and preventing damage from overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides reliable performance and efficient operation in a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand higher temperatures without compromising performance or reliability.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish offers good solderability and is lead-free, making it environmentally friendly and compliant with modern regulations.

Technical Specifications

Other Function Transistors MCH6331-TL-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

MCH6331-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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