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MCH6307-TL-E

Onsemi

MCH6307-TL-E by Onsemi

MCH6307-TL-E by Onsemi is a P-CHANNEL transistor with 5A max drain current and 2W max power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount configurations in various electronic devices.

Median Price

$0.277

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

6,000

-

$0.277

$0.230

$0.205

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.350

10k+ parts

-

6,000

-

-

$0.350

-

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.257

6,000

-

-

-

$0.257

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,093 parts In-Stock

1+ parts

$0.190

100+ parts

-

1k+ parts

-

10k+ parts

-

1,093

$0.190

-

-

-

Digiode

USA . 181 parts In-Stock

1+ parts

$0.217

100+ parts

-

1k+ parts

-

10k+ parts

-

181

$0.217

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 86 parts In-Stock

1+ parts

$0.190

100+ parts

-

1k+ parts

-

10k+ parts

-

86

$0.190

-

-

-

Corphita

USA . 563 parts In-Stock

1+ parts

$0.205

100+ parts

-

1k+ parts

-

10k+ parts

-

563

$0.205

-

-

-

Kepictronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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30,000

-

-

-

-

Authorized Procurement Solutions

USA . 22,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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22,000

-

-

-

-

Kulean Microsystems

USA . 8,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,100

-

-

-

-

TANS Electronics

Latvia . 6,167 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,167

-

-

-

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SupplyDigital Components

Austria . 6,156 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,156

-

-

-

-

Continental Prestige Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.190

10k+ parts

-

6,000

-

-

$0.190

-

Problanco Electronics

Mexico . 5,812 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,812

-

-

-

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Assy Fe

Spain . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

UHIMA Technologies

Türkiye . 512 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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512

-

-

-

-

Overview

Elevate your electronic projects with the MCH6307-TL-E by Onsemi. Crafted with precision and expertise, this P-CHANNEL field effect transistor offers unparalleled performance and reliability. Ideal for a range of applications, this single configuration device boasts an enhancement mode operating mode, a maximum drain current of 5A, and a maximum power dissipation of 2W. With its cutting-edge Metal-Oxide Semiconductor technology, this surface mount transistor ensures optimal efficiency and durability. Trust Onsemi to deliver quality components that elevate your designs to new heights. Experience the difference with the MCH6307-TL-E today.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are suitable for applications where low-side switching is required, making this product versatile for a variety of circuit designs.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, making this product ideal for compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are typically easier to use and require lower power to control, enhancing the efficiency of the circuit this product is used in.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power loads efficiently, making it suitable for applications that require reliable performance.

Maximum Operating Temperature: 150 °C

Operating temperature of up to 150 °C ensures reliable performance in a wide range of environments, making this product suitable for various temperature conditions.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish offers good solderability and is environmentally friendly, making this product a sustainable choice for electronic manufacturing.

Technical Specifications

Other Function Transistors MCH6307-TL-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Trade Compliance

MCH6307-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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