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MCH6331

Onsemi

MCH6331 by Onsemi

The Onsemi MCH6331 is a P-CHANNEL FET with 3.5A max drain current and 1.5W max power dissipation in enhancement mode. Ideal for applications requiring high power efficiency, it operates at up to 150 °C making it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,291 parts In-Stock

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Vyrian

USA . 2,097 parts In-Stock

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2,097

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Distributors (Availability)

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,419 parts In-Stock

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Problanco Electronics

Mexico . 7,042 parts In-Stock

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Kulean Microsystems

USA . 5,740 parts In-Stock

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Corphita

USA . 2,042 parts In-Stock

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SupplyDigital Components

Austria . 607 parts In-Stock

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607

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UHIMA Technologies

Türkiye . 522 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Looking for a reliable and high-quality P-Channel transistor for your electronic projects? Look no further than the MCH6331 by Onsemi! With its single configuration and enhancement mode operating mode, this transistor is perfect for a wide range of applications. From power supplies to motor control, the MCH6331 offers superior performance and efficiency. Trust in Onsemi's reputation for excellence in semiconductor technology and get the job done right with the MCH6331. Experience the value and benefits that this transistor brings to your projects today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high efficiency and low on-state resistance, making them suitable for applications requiring high power.

Configuration: SINGLE

Single configuration transistors are straightforward to use and integrate into circuits, making them ideal for simpler applications.

Surface Mount: YES

Surface mount transistors are smaller in size and can be easily placed on PCBs, saving space and making them suitable for compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the switching operation and can provide higher efficiency in power conversion applications.

Maximum Drain Current (Abs) (ID): 3.5 A

With a high maximum drain current, this transistor can handle larger loads and is suitable for applications requiring high power output.

Maximum Power Dissipation (Abs): 1.5 W

The low maximum power dissipation indicates that this transistor is energy-efficient and can operate efficiently without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good overall performance, reliability, and robustness in a wide range of applications.

Maximum Operating Temperature: 150 °C

Being able to operate at a maximum temperature of 150 °C allows this transistor to withstand higher temperatures, making it suitable for industrial applications.

Technical Specifications

Other Function Transistors MCH6331 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6331 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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