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MCH6308

Onsemi

MCH6308 by Onsemi

The Onsemi MCH6308 is a P-CHANNEL FET with 3.5A max drain current and 1.5W power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic circuits requiring high power handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,252 parts In-Stock

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Digiode

USA . 1,153 parts In-Stock

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Assy Fe

Spain . 21,000 parts In-Stock

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21,000

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SupplyDigital Components

Austria . 6,838 parts In-Stock

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Kulean Microsystems

USA . 5,262 parts In-Stock

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5,262

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TANS Electronics

Latvia . 3,376 parts In-Stock

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Problanco Electronics

Mexico . 1,946 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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969

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Corphita

USA . 512 parts In-Stock

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Corohmni

South Africa . 182 parts In-Stock

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Overview

Get ready for top-notch performance with the MCH6308 by Onsemi! This P-CHANNEL transistor offers unparalleled quality and reliability, making it a go-to choice for a wide range of applications. From power management to amplifier circuits, this single configuration transistor is designed to enhance efficiency and deliver exceptional results. With a maximum drain current of 3.5A and a maximum power dissipation of 1.5W, this transistor is built to handle even the most demanding tasks. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high input impedance, low noise, and high voltage capability, making them suitable for high-speed switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, enhancing overall system reliability.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB designs, saving space and enabling high-density mounting.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easier control and switching characteristics, making them ideal for applications that require precise modulation.

Maximum Drain Current (Abs) (ID): 3.5 A

With a high maximum drain current capacity, this transistor can handle high current loads without overheating or failing, ensuring reliable performance.

Maximum Power Dissipation (Abs): 1.5 W

The low power dissipation rating indicates that this transistor can operate efficiently without generating excessive heat, contributing to overall energy efficiency.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high gate input impedance and low input capacitance, enhancing the performance of the transistor in high-frequency applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate in demanding environments without risking performance degradation, ensuring long-term reliability.

Technical Specifications

Other Function Transistors MCH6308 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6308 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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