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MCH6305

Onsemi

MCH6305 by Onsemi

The Onsemi MCH6305 is a P-CHANNEL transistor with SINGLE configuration, suitable for surface mount applications. It operates in ENHANCEMENT MODE with a max drain current of 4A and power dissipation of 1.5W. Ideal for use in METAL-OXIDE SEMICONDUCTOR technology at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,389 parts In-Stock

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Vyrian

USA . 500 parts In-Stock

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500

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Kulean Microsystems

USA . 7,778 parts In-Stock

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Assy Fe

Spain . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 4,406 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 2,380 parts In-Stock

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Kepictronics

USA . 707 parts In-Stock

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707

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SupplyDigital Components

Austria . 664 parts In-Stock

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UHIMA Technologies

Türkiye . 580 parts In-Stock

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580

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TANS Electronics

Latvia . 565 parts In-Stock

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Corohmni

South Africa . 352 parts In-Stock

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Overview

Discover the power of the MCH6305 by Onsemi, a top-quality P-CHANNEL transistor that offers unparalleled performance and reliability. Manufactured by the trusted brand Onsemi, this versatile component is perfect for a wide range of applications in electronics. With its enhancement mode operation and high maximum drain current, the MCH6305 delivers superior efficiency and functionality. Experience the value and benefits of this cutting-edge transistor and take your projects to the next level with Onsemi's MCH6305.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance, making them suitable for high efficiency and low power consumption applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and reduces component count, making it easier to integrate into various electronic systems.

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, making it ideal for small electronic devices and PCB applications.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE operation provides improved control over the transistor and allows for efficient switching in various applications.

Maximum Drain Current (Abs) (ID): 4 A

With a high maximum drain current rating of 4 A, this transistor can handle higher power levels, making it suitable for applications that require a reliable current output.

Maximum Power Dissipation (Abs): 1.5 W

The maximum power dissipation of 1.5 W indicates that the transistor can handle moderate power levels without overheating, ensuring stable performance in varying operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology offers high efficiency and fast switching speeds, making it suitable for applications where precision and speed are essential.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150 °C allows for reliable performance in high-temperature environments, making it suitable for industrial and automotive applications.

Technical Specifications

Other Function Transistors MCH6305 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6305 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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