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MCH6337

Onsemi

MCH6337 by Onsemi

The Onsemi MCH6337 is a P-CHANNEL transistor with 4.5A max drain current and 1.5W max power dissipation in SINGLE configuration. Ideal for applications requiring ENHANCEMENT MODE operation at up to 150 °C, using METAL-OXIDE SEMICONDUCTOR technology in surface mount setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 689 parts In-Stock

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Digiode

USA . 323 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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SupplyDigital Components

Austria . 6,628 parts In-Stock

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TANS Electronics

Latvia . 3,024 parts In-Stock

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Problanco Electronics

Mexico . 2,729 parts In-Stock

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Corphita

USA . 1,339 parts In-Stock

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UHIMA Technologies

Türkiye . 600 parts In-Stock

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Kulean Microsystems

USA . 391 parts In-Stock

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Corohmni

South Africa . 250 parts In-Stock

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Overview

Experience the superior quality and reliability of the MCH6337 P-CHANNEL transistor from Onsemi. Manufactured with cutting-edge METAL-OXIDE SEMICONDUCTOR technology, this single configuration device offers a maximum drain current of 4.5A and a power dissipation of 1.5W, making it ideal for a wide range of applications. From enhancing power management systems to improving circuit efficiency, the MCH6337 delivers exceptional performance and value to customers looking for innovative solutions. Trust Onsemi for top-of-the-line transistors that exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-state resistance, making them ideal for high-power applications.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying the design process.

Surface Mount: YES

Surface mount transistors save space on the circuit board and are suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally-off devices, providing added safety and control in circuit operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability in transistor performance.

Maximum Drain Current (Abs) (ID): 4.5 A

With a high maximum drain current, this transistor can handle substantial power loads without overheating.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation ensures that the transistor can operate effectively under heavy load conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Technical Specifications

Other Function Transistors MCH6337 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6337 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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