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MCH6122

Onsemi

MCH6122 by Onsemi

The Onsemi MCH6122 is a PNP transistor with a max collector current of 3A and min DC current gain of 200. With a max power dissipation of 1W and operating temperature up to 150 °C, it's ideal for applications requiring high current amplification in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,087 parts In-Stock

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Digiode

USA . 269 parts In-Stock

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269

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SupplyDigital Components

Austria . 7,360 parts In-Stock

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TANS Electronics

Latvia . 6,815 parts In-Stock

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Kulean Microsystems

USA . 5,176 parts In-Stock

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Problanco Electronics

Mexico . 763 parts In-Stock

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Corohmni

South Africa . 393 parts In-Stock

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UHIMA Technologies

Türkiye . 325 parts In-Stock

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Corphita

USA . 314 parts In-Stock

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Overview

Upgrade your electronics with the MCH6122 by Onsemi, a top-quality PNP transistor that offers reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a variety of applications. Whether you're looking to improve power dissipation or increase collector current, the MCH6122 has got you covered. Experience the benefits of using a high-quality transistor like the MCH6122 and take your projects to the next level. Trust Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are widely used in amplifier circuits and high-side switching applications, making this product versatile for various electronic projects.

Configuration: SINGLE

Single configuration transistors are simple to use and offer easy implementation in circuits, making this product user-friendly for DIY enthusiasts and professionals alike.

Surface Mount: YES

Surface mount transistors are compact and suitable for densely populated PCBs, allowing for efficient use of space and ease of manufacturing in modern electronics.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels, making it suitable for a wide range of applications without overheating.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures reliable amplification in circuits, offering stable performance and consistent output signals when using this transistor.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C, this transistor can withstand elevated temperatures, ensuring reliability and longevity in various electronic devices and environments.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle higher current loads, making it suitable for power applications where high current capabilities are required.

Technical Specifications

Other Function Transistors MCH6122 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6122 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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