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MCH6001

Onsemi

MCH6001 by Onsemi

The Onsemi MCH6001 is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.6W, min DC current gain of 60, and operates up to 150 °C. Ideal for high-frequency applications with a nominal transition frequency of 13GHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,209 parts In-Stock

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Vyrian

USA . 342 parts In-Stock

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SupplyDigital Components

Austria . 8,218 parts In-Stock

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Problanco Electronics

Mexico . 7,353 parts In-Stock

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TANS Electronics

Latvia . 6,528 parts In-Stock

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Kulean Microsystems

USA . 6,492 parts In-Stock

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Corphita

USA . 1,909 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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UHIMA Technologies

Türkiye . 250 parts In-Stock

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Overview

Discover the innovative MCH6001 by Onsemi, a high-quality NPN transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this transistor is ideal for a wide range of applications. With a maximum power dissipation of 0.6W and a minimum DC current gain of 60, this transistor ensures efficient operation at high frequencies. Whether you're working on audio amplifiers, switch-mode power supplies, or RF circuits, the MCH6001 delivers exceptional value, precision, and consistency. Upgrade your projects with the MCH6001 and experience the difference today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for a wide range of uses.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them ideal for simple designs or prototypes.

Surface Mount: YES

Surface mount transistors are compact and allow for high-density circuit board designs, making this product suitable for small electronic devices.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6 W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 indicates that this transistor provides consistent amplification of input signals, resulting in accurate output signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for industrial or automotive applications.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15 A allows this transistor to handle moderate current levels, making it suitable for small to medium power applications.

Nominal Transition Frequency (fT): 13000 MHz

With a nominal transition frequency of 13,000 MHz, this transistor is capable of high-frequency operation, making it ideal for RF applications or high-speed switching circuits.

Technical Specifications

Other Function Transistors MCH6001 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

MCH6001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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