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MCH6203

Onsemi

MCH6203 by Onsemi

The Onsemi MCH6203 is an NPN transistor with a max power dissipation of 1W and a min DC current gain of 200. It operates at temperatures up to 150 °C, making it suitable for various applications requiring a collector current of up to 1A in surface-mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,183 parts In-Stock

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Digiode

USA . 1,368 parts In-Stock

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SupplyDigital Components

Austria . 7,887 parts In-Stock

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Kulean Microsystems

USA . 7,241 parts In-Stock

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TANS Electronics

Latvia . 5,889 parts In-Stock

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Problanco Electronics

Mexico . 4,444 parts In-Stock

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Corphita

USA . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 706 parts In-Stock

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706

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Corohmni

South Africa . 134 parts In-Stock

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Overview

Unleash the power of innovation with the MCH6203 by Onsemi. As a leader in the semiconductor industry, Onsemi delivers top-quality products that exceed expectations. The MCH6203, a versatile NPN transistor, is designed for a multitude of applications. From amplifiers to voltage regulators, this single-channel transistor offers unmatched reliability and performance. With a maximum power dissipation of 1W and a minimum DC current gain of 200, the MCH6203 is built to handle whatever task you throw its way. Trust Onsemi to provide the products you need to succeed.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making them versatile and widely applicable.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for straightforward circuits, simplifying design and assembly processes.

Surface Mount: YES

Surface mount transistors are more compact and easier to integrate into modern electronic devices, enabling smaller and more efficient designs.

Maximum Power Dissipation (Abs): 1W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating, enhancing its reliability and performance.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain of 200 ensures stable and consistent amplification in circuits, making this transistor suitable for demanding applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 1A

A maximum collector current of 1A allows this transistor to handle higher currents, enabling it to drive demanding loads in power circuits.

Technical Specifications

Other Function Transistors MCH6203 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6203 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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