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MCH6123

Onsemi

MCH6123 by Onsemi

The Onsemi MCH6123 is a PNP transistor with a max collector current of 3A and min DC current gain of 200. With a max power dissipation of 1W and operating temperature up to 150 °C, it is suitable for various applications requiring single configuration surface mount transistors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,423 parts In-Stock

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Digiode

USA . 643 parts In-Stock

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643

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SupplyDigital Components

Austria . 7,618 parts In-Stock

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Problanco Electronics

Mexico . 7,245 parts In-Stock

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Corphita

USA . 1,539 parts In-Stock

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TANS Electronics

Latvia . 1,429 parts In-Stock

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UHIMA Technologies

Türkiye . 967 parts In-Stock

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Kulean Microsystems

USA . 230 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Overview

Experience superior performance with the MCH6123 by Onsemi. Known for their exceptional quality and reliability, Onsemi delivers cutting-edge technology in the category of Other Function Transistors. Ideal for a variety of applications, this PNP transistor offers customers unmatched value and benefits. With a maximum power dissipation of 1W and a minimum DC current gain of 200, the MCH6123 ensures high efficiency and precision in your electronic projects. Trust Onsemi for innovative solutions that elevate your work to the next level.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, offering high gain and low noise characteristics.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels without overheating, ensuring reliability.

Minimum DC Current Gain (hFE): 200

A high DC current gain of 200 ensures efficient amplification and signal processing, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to withstand harsh environments and extended usage without performance degradation.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle high current levels, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors MCH6123 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6123 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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