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MCH6336

Onsemi

MCH6336 by Onsemi

The Onsemi MCH6336 is a P-CHANNEL FET with 5A max drain current and 1.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high power efficiency at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,397 parts In-Stock

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Digiode

USA . 1,776 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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Problanco Electronics

Mexico . 4,097 parts In-Stock

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SupplyDigital Components

Austria . 3,570 parts In-Stock

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TANS Electronics

Latvia . 1,903 parts In-Stock

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Kulean Microsystems

USA . 1,454 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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708

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Corphita

USA . 398 parts In-Stock

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Corohmni

South Africa . 296 parts In-Stock

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Overview

Unlock the power of the MCH6336 by Onsemi, a high-quality P-CHANNEL transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this single-channel transistor is perfect for a wide range of applications. From enhancing circuit efficiency to improving device functionality, the MCH6336 provides unmatched value and benefits to customers looking for top-notch components. Experience the difference with Onsemi's MCH6336 and take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors can provide higher current amplification and lower input impedance, making them suitable for power switching applications.

Configuration: SINGLE

A single configuration simplifies the circuit design and offers ease of implementation in various applications.

Surface Mount: YES

Surface mount technology improves the manufacturing process by allowing for automated assembly, reducing production costs, and enabling higher component densities on PCBs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy voltage control, high input impedance, and improved switching speed.

Maximum Drain Current (Abs) (ID): 5 A

With a high maximum drain current, this transistor can handle heavy loads and is suitable for high-power applications.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation allows the transistor to handle heat dissipation effectively, ensuring reliable operation in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low leakage current, and improved performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments and provides stability under different operating conditions.

Technical Specifications

Other Function Transistors MCH6336 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6336 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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