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MCH6103

Onsemi

MCH6103 by Onsemi

The Onsemi MCH6103 is a PNP transistor with max. power dissipation of 1W, min. DC current gain of 200, and max. collector current of 1A. Ideal for applications requiring single configuration in surface mount technology, operating up to 150 °C efficiently.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,259 parts In-Stock

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2,259

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Digiode

USA . 965 parts In-Stock

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965

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Distributors (Availability)

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Kulean Microsystems

USA . 7,265 parts In-Stock

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7,265

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TANS Electronics

Latvia . 6,880 parts In-Stock

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6,880

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Problanco Electronics

Mexico . 5,877 parts In-Stock

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5,877

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SupplyDigital Components

Austria . 4,713 parts In-Stock

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4,713

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UHIMA Technologies

Türkiye . 970 parts In-Stock

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970

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Corphita

USA . 659 parts In-Stock

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659

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Corohmni

South Africa . 274 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the MCH6103 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-quality products that cater to various applications in the field of Other Function Transistors. With its PNP polarity and single configuration, this transistor offers a seamless integration into your projects. Experience the benefits of a maximum power dissipation of 1W, a minimum DC current gain of 200, and a maximum collector current of 1A. Trust Onsemi for reliability and efficiency in every component, ensuring the success of your designs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used for applications where the current flows from emitter to collector, making this product suitable for specific circuit requirements.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into various electronic systems, making this product user-friendly.

Surface Mount: YES

Surface mount capability enables efficient PCB assembly and saves space on the board, making this product ideal for compact electronic devices.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this product can handle moderate power levels without overheating, ensuring reliable performance in different applications.

Minimum DC Current Gain (hFE): 200

Having a minimum DC current gain of 200 indicates that this transistor can effectively amplify input signals, making it suitable for use in amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand high temperature environments, increasing its versatility and durability.

Maximum Collector Current (IC): 1 A

Capable of handling a maximum collector current of 1 A, this transistor is suitable for circuits requiring higher current loads and provides reliable performance under varying load conditions.

Technical Specifications

Other Function Transistors MCH6103 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6103 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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