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MCH6318

Onsemi

MCH6318 by Onsemi

The Onsemi MCH6318 is a P-CHANNEL FET with 2A max drain current and 1W max power dissipation. Ideal for applications requiring enhancement mode operation, it features metal-oxide semiconductor technology and can operate at temperatures up to 150 °C. Suitable for various electronic circuits needing a single configuration surface-mount transistor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,103 parts In-Stock

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Digiode

USA . 1,064 parts In-Stock

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Problanco Electronics

Mexico . 7,124 parts In-Stock

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TANS Electronics

Latvia . 6,479 parts In-Stock

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SupplyDigital Components

Austria . 4,379 parts In-Stock

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Kulean Microsystems

USA . 2,894 parts In-Stock

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Corphita

USA . 495 parts In-Stock

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Corohmni

South Africa . 464 parts In-Stock

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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Overview

Experience the next level of performance with the MCH6318 P-CHANNEL transistor from Onsemi. With a single configuration and enhancement mode operation, this surface-mount transistor offers exceptional quality and reliability for a variety of applications. From power management to signal amplification, this transistor delivers maximum drain current of 2A and a power dissipation of 1W, ensuring optimal performance even in demanding conditions. Trust Onsemi's expertise and choose the MCH6318 for superior functionality and value.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors offer low on-state resistance and high input impedance, making them suitable for use in high-performance applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and allows for easy integration into electronic devices.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE transistors have high input impedance and fast switching speeds, suitable for applications requiring high efficiency and speed.

Maximum Drain Current (Abs): 2 A

With a maximum drain current of 2 A, this transistor can handle moderate to high power loads, making it versatile for various applications.

Maximum Power Dissipation (Abs): 1 W

The maximum power dissipation of 1 W indicates that this transistor can handle heat dissipation effectively, increasing reliability and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology offers high efficiency and low power consumption, ideal for energy-efficient applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, increasing its durability and reliability.

Technical Specifications

Other Function Transistors MCH6318 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6318 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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