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MCH6201

Onsemi

MCH6201 by Onsemi

The Onsemi MCH6201 is an NPN transistor with a max power dissipation of 1W and a min DC current gain of 200. It operates at temperatures up to 150 °C, suitable for various applications requiring a collector current of up to 1.5A in surface-mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,396 parts In-Stock

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Vyrian

USA . 1,383 parts In-Stock

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Kulean Microsystems

USA . 5,628 parts In-Stock

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Problanco Electronics

Mexico . 5,557 parts In-Stock

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SupplyDigital Components

Austria . 4,008 parts In-Stock

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TANS Electronics

Latvia . 2,771 parts In-Stock

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Corphita

USA . 1,103 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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UHIMA Technologies

Türkiye . 212 parts In-Stock

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Overview

The MCH6201 by Onsemi is a top-of-the-line NPN transistor with a single configuration that delivers exceptional performance in various applications. Manufactured by Onsemi, a trusted leader in the industry known for producing high-quality components, this transistor offers customers unparalleled reliability and efficiency. Whether you're looking to amplify signals or control electrical currents, the MCH6201 provides the perfect solution with its maximum power dissipation of 1W, minimum DC current gain of 200, and maximum collector current of 1.5A. Trust Onsemi to deliver superior products that exceed expectations.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and require less complex circuit design, making this product user-friendly.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and space in electronic device manufacturing.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels, suitable for many electronic applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures high amplification capability, making this transistor ideal for signal amplification purposes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand elevated temperatures, increasing its reliability in various environments.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle higher current loads, making it suitable for applications requiring higher power handling capacity.

Technical Specifications

Other Function Transistors MCH6201 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6201 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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