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2SC2812-5-TB-E

Onsemi

2SC2812-5-TB-E by Onsemi

The Onsemi 2SC2812-5-TB-E is an NPN transistor with a min DC current gain of 135. It has a max collector current of 0.15A and can operate at temperatures up to 150 °C. This surface-mount transistor is ideal for applications requiring low power dissipation in single configurations.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 387,000 parts In-Stock

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$0.030

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$0.025

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$0.023

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$0.023

Verical

USA . 273,000 parts In-Stock

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Digiode

USA . 176 parts In-Stock

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$0.024

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Vyrian

USA . 8,929 parts In-Stock

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Corphita

USA . 1,535 parts In-Stock

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$0.022

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Corohmni

South Africa . 54 parts In-Stock

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Native Components

USA . 656 parts In-Stock

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$0.556

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656

$0.556

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Northwest PG Solutions

USA . 1,059 parts In-Stock

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$0.612

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$0.612

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AZTECH Wire

Italy . 919 parts In-Stock

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$10.280

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Continental Prestige Electronics

USA . 387,000 parts In-Stock

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TANS Electronics

Latvia . 7,135 parts In-Stock

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Kepictronics

USA . 4,541 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 4,041 parts In-Stock

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Kulean Microsystems

USA . 2,846 parts In-Stock

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SupplyDigital Components

Austria . 1,411 parts In-Stock

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Problanco Electronics

Mexico . 1,315 parts In-Stock

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Onsemi's 2SC2812-5-TB-E NPN transistor. This single configuration surface mount component offers a wide range of applications and is designed to deliver exceptional performance in various electronic circuits. With a maximum power dissipation of 0.2W and a minimum DC current gain of 135, this transistor ensures optimal functionality even in demanding conditions. Trust Onsemi for superior products that exceed expectations and provide unmatched value to our customers.

Feature Benefit Bullets

Polarity/Channel Type: NPN

NPN transistors are commonly used for amplifying and switching electronic signals, making this product versatile for a variety of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration into a variety of electronic systems.

Surface Mount: YES

Surface mount capability allows for easier and more efficient soldering onto PCBs, saving time and reducing assembly costs.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels without risking damage, ensuring reliable performance.

Minimum DC Current Gain (hFE): 135

A minimum DC current gain of 135 ensures that the transistor provides sufficient amplification of the input signal, making it suitable for various signal processing tasks.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, enhancing its durability and reliability.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15 A allows the transistor to handle moderate current levels, making it suitable for various switching applications in electronic circuits.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish provides good solderability and durability, ensuring a reliable connection to the PCB and extending the product's lifespan.

Technical Specifications

Other Function Transistors 2SC2812-5-TB-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

135

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

2SC2812-5-TB-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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