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2SC2078

Onsemi

2SC2078 by Onsemi

2SC2078 NPN transistor by Onsemi has a max power dissipation of 10W, min DC current gain of 25, and max collector current of 3A. Ideal for applications requiring high-frequency operation up to 150MHz such as RF amplification in communication devices.

Median Price

$14.200

Lifecycle Status

Suppliers In-Stock

13

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1k+

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American Microsemiconductor Inc.

USA . 805 parts In-Stock

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Vyrian

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Digiode

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Chip Stock

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MISTER SPROCKETS

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ACDS - Activité Composants Distribution Service

France . 88 parts In-Stock

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South Electronics

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Huijzer Components

Netherlands . 68 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 44 parts In-Stock

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LittleDiode

UK . 23 parts In-Stock

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First Choice Components Inc.

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ECAB

Sweden . 12 parts In-Stock

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GES GmbH

Germany . 7 parts In-Stock

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Corohmni

South Africa . 346 parts In-Stock

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Native Components

USA . 484 parts In-Stock

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Northwest PG Solutions

USA . 1,431 parts In-Stock

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Kulean Microsystems

USA . 5,747 parts In-Stock

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Problanco Electronics

Mexico . 4,701 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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SupplyDigital Components

Austria . 1,227 parts In-Stock

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TANS Electronics

Latvia . 1,105 parts In-Stock

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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Assy Fe

Spain . 318 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of innovation with the 2SC2078 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This versatile NPN transistor is perfect for a wide range of applications, offering customers unparalleled value and performance. From amplifying signals to switching circuits, the 2SC2078 provides the perfect solution for all your electronic projects. Experience the benefits of superior design and efficiency with Onsemi's 2SC2078 today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and can simplify design layouts, making them convenient to use.

Maximum Power Dissipation (Abs): 10 W

With a maximum power dissipation of 10 W, this transistor can handle high power levels without overheating, increasing reliability.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures efficient amplification of signals, enabling precise control and reliable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for a wide range of environments.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows for high current handling capabilities, making this transistor suitable for power applications.

Nominal Transition Frequency (fT): 150 MHz

With a nominal transition frequency of 150 MHz, this transistor can operate at high frequencies, enabling fast switching speeds and signal processing.

Technical Specifications

Other Function Transistors 2SC2078 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2078 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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