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2SC2271

Onsemi

2SC2271 by Onsemi

The Onsemi 2SC2271 is an NPN transistor with a max power dissipation of 0.9W, min DC current gain of 40, and max collector current of 0.1A. It operates at a nominal transition frequency of 50MHz. Ideal for applications requiring low power dissipation and moderate current amplification in electronic circuits.

Median Price

$0.810

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Digiode

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Vyrian

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ComSIT Distribution GmbH

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Huijzer Components

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Fibra_Brandt Electronic GMBH

Germany . 71 parts In-Stock

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ECAB

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Resion

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Prism Electronics

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LittleDiode

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Native Components

USA . 509 parts In-Stock

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$0.165

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$0.158

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Northwest PG Solutions

USA . 986 parts In-Stock

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Corohmni

South Africa . 217 parts In-Stock

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Perfect Parts

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TANS Electronics

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Cyclops Electronics Ltd (Excess)

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Problanco Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Overview

Unleash the power of innovation with the Onsemi 2SC2271, a top-of-the-line NPN transistor that delivers unmatched performance and reliability. Manufactured by the industry leader Onsemi, this transistor offers exceptional quality and precision engineering for a wide range of applications. From amplifiers to signal processing, the 2SC2271 stands out for its high efficiency and durability, making it the ultimate choice for professionals seeking superior results. Say goodbye to mediocre performance and hello to excellence with the Onsemi 2SC2271.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in a variety of applications, offering reliable performance and compatibility with many circuits.

Configuration: SINGLE

Single configuration transistors are simple to use and typically used for basic switching and amplification functions.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle higher power levels without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 indicates that this transistor is capable of amplifying current efficiently in various circuit designs.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for low-power applications.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50 MHz indicates that this transistor can operate at high frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Other Function Transistors 2SC2271 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2271 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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