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2SC2271C

Onsemi

2SC2271C by Onsemi

The Onsemi 2SC2271C is an NPN transistor with a max power dissipation of 0.9W, min hFE of 40, and max IC of 0.1A. It operates at a nominal fT of 50MHz. Commonly used in amplification circuits due to its high gain and low power consumption capabilities.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,011 parts In-Stock

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Vyrian

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Native Components

USA . 694 parts In-Stock

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$0.120

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Northwest PG Solutions

USA . 149 parts In-Stock

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$0.132

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Problanco Electronics

Mexico . 7,477 parts In-Stock

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SupplyDigital Components

Austria . 4,055 parts In-Stock

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Kulean Microsystems

USA . 2,201 parts In-Stock

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TANS Electronics

Latvia . 1,764 parts In-Stock

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UHIMA Technologies

Türkiye . 766 parts In-Stock

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Corphita

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Corohmni

South Africa . 446 parts In-Stock

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Overview

Elevate your electronics with the 2SC2271C by Onsemi, a top-quality NPN transistor that offers unrivaled performance and reliability. Manufactured by Onsemi, a renowned industry leader, this transistor is perfect for a wide range of applications in electronics. With a maximum power dissipation of 0.9W and a minimum DC current gain of 40, this transistor delivers exceptional efficiency and precision. Whether you're a seasoned professional or an amateur enthusiast, the 2SC2271C guarantees superior functionality and value for all your electronic projects. Upgrade your devices today with the Onsemi 2SC2271C.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance, making this product suitable for amplification applications.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and can simplify the design process, making this product a convenient choice for various electronic projects.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle a decent amount of power without getting damaged, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures that this transistor can provide sufficient amplification of a signal, making it suitable for use in signal processing circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50 MHz indicates that this transistor is capable of amplifying high-frequency signals effectively, making it a good choice for RF applications.

Technical Specifications

Other Function Transistors 2SC2271C attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2271C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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