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2SC2228YD

Onsemi

2SC2228YD by Onsemi

2SC2228YD by Onsemi is an NPN transistor with a max power dissipation of 0.9W, hFE of 60, and fT of 50MHz. Ideal for low current applications in electronics due to its single configuration and max collector current of 0.05A at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

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2

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< 1k

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Digiode

USA . 593 parts In-Stock

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Vyrian

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Native Components

USA . 687 parts In-Stock

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$8.241

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Northwest PG Solutions

USA . 1,041 parts In-Stock

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$9.065

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$8.159

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Kulean Microsystems

USA . 6,968 parts In-Stock

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SupplyDigital Components

Austria . 5,217 parts In-Stock

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Problanco Electronics

Mexico . 4,114 parts In-Stock

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Corphita

USA . 2,075 parts In-Stock

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TANS Electronics

Latvia . 1,186 parts In-Stock

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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Corohmni

South Africa . 354 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the 2SC2228YD by Onsemi. Known for their high-quality components, Onsemi delivers reliable solutions for a wide range of applications. The 2SC2228YD is a versatile NPN transistor that offers exceptional performance and efficiency. With a maximum power dissipation of 0.9W and a minimum DC current gain of 60, this transistor can handle a variety of tasks with ease. Whether you're working on amplifiers, oscillators, or other electronic circuits, the 2SC2228YD provides the value and reliability you need to bring your ideas to life.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and integration process, making this product easier to work with.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this product can handle higher power levels efficiently, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures that the transistor provides stable and consistent amplification, contributing to the reliability of the product.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand higher temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05 A allows this product to handle moderate current levels, making it suitable for a wide range of circuit designs.

Nominal Transition Frequency (fT): 50 MHz

A higher nominal transition frequency of 50 MHz indicates fast switching speeds, making this product ideal for high-frequency applications such as RF amplifiers and oscillators.

Technical Specifications

Other Function Transistors 2SC2228YD attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2228YD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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