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2SC2228YC

Onsemi

2SC2228YC by Onsemi

2SC2228YC by Onsemi is an NPN transistor with a max power dissipation of 0.9W, hFE of 40, and fT of 50MHz. Ideal for low current applications in electronics due to its single configuration and max collector current of 0.05A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,996 parts In-Stock

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Digiode

USA . 873 parts In-Stock

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873

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Native Components

USA . 235 parts In-Stock

1+ parts

$391.674

100+ parts

$383.840

1k+ parts

$379.923

10k+ parts

$376.007

235

$391.674

$383.840

$379.923

$376.007

Northwest PG Solutions

USA . 2,154 parts In-Stock

1+ parts

$430.841

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$430.841

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Kulean Microsystems

USA . 7,459 parts In-Stock

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7,459

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SupplyDigital Components

Austria . 4,423 parts In-Stock

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Corphita

USA . 2,194 parts In-Stock

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2,194

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TANS Electronics

Latvia . 1,772 parts In-Stock

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UHIMA Technologies

Türkiye . 577 parts In-Stock

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577

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Problanco Electronics

Mexico . 347 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Overview

Looking to amplify your projects with top-quality transistors? Look no further than the 2SC2228YC by Onsemi. Known for their superior manufacturing standards, Onsemi delivers reliable and efficient components for a wide range of applications. From audio amplifiers to signal processing circuits, this NPN transistor offers high performance and durability. Trust in Onsemi's reputation for excellence and choose the 2SC2228YC for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this product versatile and suitable for a wide range of uses.

Configuration: SINGLE

Single configuration transistors are simple to use and are commonly used in basic electronic circuits, making this product ideal for beginners or simple applications.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this product can handle moderate power levels effectively without overheating or failing, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates that this transistor can provide amplification of input signals, making it suitable for use in signal processing and amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand high temperatures without degrading or failing, ensuring reliable performance in demanding environments.

Maximum Collector Current (IC): 0.05 A

A maximum collector current of 0.05 A allows this transistor to handle moderate current levels, making it suitable for low to medium power applications where reliable current handling is important.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50 MHz, this transistor is capable of operating at high frequencies, making it suitable for radio frequency (RF) applications and other high-speed circuits.

Technical Specifications

Other Function Transistors 2SC2228YC attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2228YC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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