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2SC2228YF

Onsemi

2SC2228YF by Onsemi

2SC2228YF by Onsemi is an NPN transistor with a max power dissipation of 0.9W, hFE of 160, and fT of 50MHz. Ideal for low current applications in electronics due to its single configuration and max collector current of 0.05A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,173 parts In-Stock

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Digiode

USA . 2,033 parts In-Stock

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Native Components

USA . 72 parts In-Stock

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$10.740

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72

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Northwest PG Solutions

USA . 1,781 parts In-Stock

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$11.814

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$10.633

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Kulean Microsystems

USA . 4,935 parts In-Stock

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TANS Electronics

Latvia . 4,491 parts In-Stock

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SupplyDigital Components

Austria . 3,673 parts In-Stock

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Problanco Electronics

Mexico . 2,605 parts In-Stock

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Corphita

USA . 1,046 parts In-Stock

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Corohmni

South Africa . 424 parts In-Stock

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UHIMA Technologies

Türkiye . 417 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC2228YF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in all their products. The 2SC2228YF is a game-changer in the world of Other Function Transistors, offering unmatched performance and efficiency. Whether you're looking to amplify signals or switch electronic circuits, this NPN transistor is your go-to solution. With a high DC current gain and maximum power dissipation, this transistor can handle even the most demanding applications with ease. Trust Onsemi to deliver the best in class components for your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications due to their high current gain and low on-resistance.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs.

Maximum Power Dissipation (Abs): 0.9 W

The high maximum power dissipation allows the transistor to handle power efficiently, making it suitable for various applications.

Minimum DC Current Gain (hFE): 160

A high DC current gain ensures effective amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature indicates the transistor's ability to withstand elevated temperatures, ensuring reliability in harsh environments.

Maximum Collector Current (IC): 0.05 A

The maximum collector current rating specifies the maximum current the transistor can handle, making it suitable for low power applications.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency enables the transistor to switch at high speeds, making it suitable for high frequency applications.

Technical Specifications

Other Function Transistors 2SC2228YF attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

160

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2228YF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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