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2SC2271D

Onsemi

2SC2271D by Onsemi

2SC2271D by Onsemi is an NPN transistor with a max power dissipation of 0.9W, min DC current gain of 60, and max collector current of 0.1A. It operates at a nominal transition frequency of 50MHz, making it suitable for various electronic applications requiring low to medium power amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 1,240 parts In-Stock

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Digiode

USA . 697 parts In-Stock

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Vyrian

USA . 416 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 880 parts In-Stock

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$0.120

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$0.115

880

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$0.115

Northwest PG Solutions

USA . 2,282 parts In-Stock

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$0.132

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$0.116

2,282

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$0.116

SupplyDigital Components

Austria . 5,143 parts In-Stock

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5,143

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TANS Electronics

Latvia . 3,739 parts In-Stock

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Corphita

USA . 2,079 parts In-Stock

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2,079

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Problanco Electronics

Mexico . 1,961 parts In-Stock

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UHIMA Technologies

Türkiye . 566 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Kulean Microsystems

USA . 11 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the 2SC2271D by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and innovation in every product they create. The 2SC2271D, belonging to the category of Other Function Transistors, offers exceptional value and benefits to customers with its NPN polarity, high DC current gain, and maximum collector current. Perfect for a range of applications, this transistor guarantees efficiency and precision like no other. Elevate your projects with the 2SC2271D and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making this product versatile for various applications.

Configuration: SINGLE

A single configuration simplifies circuit design and makes it easier to integrate this transistor into existing or new electronic systems.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle moderate power levels effectively without overheating, ensuring reliable performance in demanding conditions.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 indicates good amplification capabilities, allowing for efficient signal processing and amplification in various electronic circuits.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A enables this transistor to handle moderate current levels, making it suitable for low to medium power applications where precise current control is required.

Nominal Transition Frequency (fT): 50 MHz

The nominal transition frequency of 50 MHz indicates the speed at which this transistor can switch between on and off states, making it suitable for high-frequency applications such as RF amplification or signal processing.

Technical Specifications

Other Function Transistors 2SC2271D attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2SC2271D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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