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2SC4731T-AY

Onsemi

2SC4731T-AY by Onsemi

2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.

Median Price

$1.069

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

$1.030

1k+ parts

$0.855

10k+ parts

$0.762

14,000

-

$1.030

$0.855

$0.762

DigiKey

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.290

10k+ parts

-

14,000

-

-

$1.290

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Verical

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.069

10k+ parts

$0.953

14,000

-

-

$1.069

$0.953

Distributors (In-Stock)

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Digiode

USA . 1,220 parts In-Stock

1+ parts

$0.803

100+ parts

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1,220

$0.803

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Chip Stock

USA . 64,000 parts In-Stock

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64,000

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Vyrian

USA . 11,732 parts In-Stock

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11,732

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ACDS - Activité Composants Distribution Service

France . 90 parts In-Stock

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90

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Distributors (Availability)

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Native Components

USA . 152 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

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$0.069

152

$0.072

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-

$0.069

Northwest PG Solutions

USA . 1,540 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

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$0.069

1,540

$0.079

-

-

$0.069

Corphita

USA . 1,298 parts In-Stock

1+ parts

$0.760

100+ parts

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1,298

$0.760

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Corohmni

South Africa . 110 parts In-Stock

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$0.845

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110

$0.845

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Microchip USA

USA . 4,019 parts In-Stock

1+ parts

$5.265

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4,019

$5.265

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AZTECH Wire

Italy . 607 parts In-Stock

1+ parts

$12.080

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607

$12.080

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Continental Prestige Electronics

USA . 14,000 parts In-Stock

1+ parts

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100+ parts

$0.763

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14,000

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$0.763

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Kulean Microsystems

USA . 7,847 parts In-Stock

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7,847

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SupplyDigital Components

Austria . 7,798 parts In-Stock

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7,798

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Problanco Electronics

Mexico . 5,584 parts In-Stock

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5,584

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TANS Electronics

Latvia . 5,477 parts In-Stock

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5,477

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Perfect Parts

USA . 202 parts In-Stock

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202

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Cyclops Electronics Ltd (Excess)

UK . 90 parts In-Stock

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90

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UHIMA Technologies

Türkiye . 34 parts In-Stock

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34

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Overview

Discover the endless possibilities with the 2SC4731T-AY by Onsemi. Known for their top-notch quality and reliability, Onsemi's products are trusted by professionals worldwide. This NPN transistor offers a maximum power dissipation of 1.5W and a minimum DC current gain of 200, making it ideal for a wide range of applications. Whether you're working on audio amplifiers, voltage regulators, or LED drivers, this transistor provides exceptional performance and efficiency. Upgrade your projects today with the 2SC4731T-AY and experience the difference that Onsemi's superior technology can make.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying signals and switching applications, making this product versatile for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies the circuit design and enhances reliability by reducing interconnections, making it easier to implement in electronic projects.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation capability, this transistor can handle significant power without overheating, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures efficient amplification of signals, making this transistor suitable for applications requiring stable and consistent performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows this transistor to operate effectively in a wide range of environments, enhancing its versatility and reliability.

Maximum Collector Current (IC): 4 A

The high maximum collector current rating enables this transistor to handle larger currents, making it suitable for power applications where high current capability is required.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple terminal finishes ensures a reliable and stable connection, reducing the risk of corrosion and improving the overall durability of the transistor in various operating conditions.

Technical Specifications

Other Function Transistors 2SC4731T-AY attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

2SC4731T-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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