Loading...

NTZD3158PT1G

Onsemi

NTZD3158PT1G by Onsemi

NTZD3158PT1G by Onsemi is a P-CHANNEL FET with 0.43A max drain current and 0.28W max power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs needing efficient power management.

Median Price

$0.107

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 164,000 parts In-Stock

1+ parts

-

100+ parts

$0.107

1k+ parts

$0.089

10k+ parts

$0.079

164,000

-

$0.107

$0.089

$0.079

DigiKey

USA . 164,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.130

164,000

-

-

-

$0.130

Verical

USA . 160,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.099

160,000

-

-

-

$0.099

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 470 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$0.087

-

-

-

Chip Stock

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

Vyrian

USA . 6,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,428

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,000 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.083

-

-

-

Corohmni

South Africa . 63 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

-

10k+ parts

-

63

$0.084

-

-

-

AZTECH Wire

Italy . 58 parts In-Stock

1+ parts

$11.490

100+ parts

-

1k+ parts

-

10k+ parts

-

58

$11.490

-

-

-

Continental Prestige Electronics

USA . 164,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.110

10k+ parts

-

164,000

-

-

$0.110

-

Kepictronics

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

Authorized Procurement Solutions

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,075 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,075

-

-

-

-

SupplyDigital Components

Austria . 6,223 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,223

-

-

-

-

Problanco Electronics

Mexico . 5,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,570

-

-

-

-

TANS Electronics

Latvia . 4,914 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,914

-

-

-

-

Kulean Microsystems

USA . 3,501 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,501

-

-

-

-

UHIMA Technologies

Türkiye . 284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

284

-

-

-

-

Overview

Discover the NTZD3158PT1G by Onsemi, a high-quality P-CHANNEL transistor that offers enhanced performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product is perfect for a variety of applications. From power management to signal amplification, this transistor delivers outstanding results. With its surface mount design and efficient operation, customers can trust in the value and benefits that this product brings to their projects. Experience the advantages of Onsemi's NTZD3158PT1G and take your designs to the next level.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-state resistance and high current-carrying capability, making them efficient for power management applications.

Surface Mount: YES

Surface mount technology allows for a more compact design, making the product suitable for smaller electronic devices and PCBs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have high input impedance, allowing for easy control and improved performance in digital applications.

Maximum Drain Current (Abs): 0.43 A

The high maximum drain current rating ensures that the transistor can handle high current loads effectively.

Maximum Power Dissipation (Abs): 0.28 W

The low power dissipation rating indicates that the transistor generates minimal heat during operation, improving overall efficiency and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics such as high input impedance, low noise, and high speed operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to be used in a wide range of temperature conditions without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and reliability, ensuring a secure connection on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature minimizes the risk of thermal stress during the assembly process, improving product durability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable solder joints and ensures proper functioning in harsh environmental conditions.

Technical Specifications

Other Function Transistors NTZD3158PT1G attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

.43 A

Maximum Drain Current (ID):

.43 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTZD3158PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.