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NTLUS3A40PZCTAG

Onsemi

NTLUS3A40PZCTAG by Onsemi

NTLUS3A40PZCTAG by Onsemi is a P-CHANNEL transistor with 6.4A max drain current and 3.8W max power dissipation in enhancement mode. Ideal for applications requiring high-power handling, such as automotive electronics or industrial control systems due to its 150 °C max operating temperature and surface mount configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 12,724 parts In-Stock

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Digiode

USA . 2,069 parts In-Stock

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AZTECH Wire

Italy . 1,064 parts In-Stock

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$16.370

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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TANS Electronics

Latvia . 7,139 parts In-Stock

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SupplyDigital Components

Austria . 6,655 parts In-Stock

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Kulean Microsystems

USA . 3,190 parts In-Stock

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Corphita

USA . 2,492 parts In-Stock

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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Problanco Electronics

Mexico . 708 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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Overview

Unlock the power of innovation with the NTLUS3A40PZCTAG by Onsemi, a top-tier manufacturer known for its superior quality and reliability. This P-CHANNEL transistor offers enhanced performance and efficiency, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this product delivers exceptional value and benefits to customers looking for cutting-edge technology. Experience the advantages of Onsemi's expertise in semiconductor technology with the NTLUS3A40PZCTAG.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are efficient and commonly used in low-power applications, making this product suitable for various electronic devices.

Maximum Drain Current (Abs) (ID): 6.4 A

With a high maximum drain current, this transistor can handle heavy loads and provide reliable performance in demanding applications.

Maximum Power Dissipation (Abs): 3.8 W

The low maximum power dissipation ensures minimal heat generation, improving overall efficiency and reliability of the product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high switching speed and low power consumption, making this transistor ideal for fast and energy-efficient circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and operate reliably in extreme temperatures.

Technical Specifications

Other Function Transistors NTLUS3A40PZCTAG attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6.4 A

Maximum Drain Current (ID):

6.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUS3A40PZCTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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