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NTLUS3A90PZCTAG

Onsemi

NTLUS3A90PZCTAG by Onsemi

NTLUS3A90PZCTAG by Onsemi is a P-CHANNEL FET with 4A max drain current and 2.3W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or battery-operated devices. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount configuration for easy integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,795 parts In-Stock

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Vyrian

USA . 1,268 parts In-Stock

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Component Stockers USA

USA . 652 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 8,209 parts In-Stock

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Kulean Microsystems

USA . 3,535 parts In-Stock

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Problanco Electronics

Mexico . 3,087 parts In-Stock

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TANS Electronics

Latvia . 2,932 parts In-Stock

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Corphita

USA . 2,113 parts In-Stock

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UHIMA Technologies

Türkiye . 468 parts In-Stock

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Corohmni

South Africa . 55 parts In-Stock

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Overview

Unleash the power of innovation with the NTLUS3A90PZCTAG by Onsemi! This top-of-the-line P-CHANNEL transistor offers unmatched quality and reliability, perfect for a wide range of applications. From enhancing performance in electronic devices to optimizing power management systems, this single configuration transistor is a game-changer in the industry. With a maximum drain current of 4A and operating mode of enhancement mode, it delivers exceptional performance while maintaining a maximum power dissipation of 2.3W. Trust Onsemi's expertise in semiconductor technology to bring you cutting-edge solutions that exceed your expectations. Elevate your projects with the NTLUS3A90PZCTAG and experience the benefits of superior functionality and efficiency like never before.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors offer low on-state resistance and higher current capabilities, making them suitable for high power applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs.

Surface Mount: YES

Surface mount transistors save space on a PCB and offer improved heat dissipation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors provide high input impedance and low leakage current, making them efficient for use in amplifiers and switching circuits.

Maximum Drain Current (Abs) (ID): 4 A

High maximum drain current allows for handling higher power loads.

Maximum Power Dissipation (Abs): 2.3 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds, low gate drive power requirements, and low on-state resistance, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to work reliably in high-temperature environments.

Terminal Finish: TIN

Tin terminal finish provides good solderability and allows for easy mounting on PCBs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor can withstand typical reflow soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260 °C ensures the reliability of the solder joints during assembly.

Technical Specifications

Other Function Transistors NTLUS3A90PZCTAG attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUS3A90PZCTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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