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NTLUS3A40PZCTBG

Onsemi

NTLUS3A40PZCTBG by Onsemi

NTLUS3A40PZCTBG by Onsemi is a P-CHANNEL transistor with 6.4A max drain current and 3.8W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems and industrial electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,551 parts In-Stock

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Vyrian

USA . 1,068 parts In-Stock

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Component Stockers USA

USA . 499 parts In-Stock

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$99.990

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Perfect Parts

USA . 23,419 parts In-Stock

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Kulean Microsystems

USA . 4,449 parts In-Stock

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SupplyDigital Components

Austria . 3,389 parts In-Stock

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Problanco Electronics

Mexico . 2,815 parts In-Stock

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TANS Electronics

Latvia . 1,042 parts In-Stock

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Corphita

USA . 639 parts In-Stock

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UHIMA Technologies

Türkiye . 505 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Overview

Unlock a world of possibilities with the NTLUS3A40PZCTBG by Onsemi. Crafted with precision and care, this P-CHANNEL transistor offers unparalleled performance and reliability for a wide range of applications. Whether you're looking to enhance your electronic projects or streamline your industrial processes, this single configuration transistor delivers exceptional value and efficiency. Trust in Onsemi's expertise and experience to bring innovation to your work. Elevate your creations with the NTLUS3A40PZCTBG today.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower ON-state resistance compared to N-channel transistors, making them suitable for high-power applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into various circuit designs without complexity.

Surface Mount: YES

Surface mount capability allows for easy installation onto circuit boards, saving space and reducing assembly time.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides high efficiency and faster switching speed, ideal for power management applications.

Maximum Drain Current (Abs): 6.4 A

High maximum drain current rating enables the transistor to handle large loads without overheating or failing.

Maximum Power Dissipation (Abs): 3.8 W

High power dissipation capability ensures the transistor can withstand heavy loads and operate reliably under high-power conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low leakage current and high switching speed, making it suitable for power electronic applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the transistor to operate in various environmental conditions without performance degradation.

Terminal Finish: TIN

Tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature helps prevent overheating during assembly, ensuring the longevity of the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature enables efficient soldering during assembly processes, ensuring a strong connection with the circuit board.

Technical Specifications

Other Function Transistors NTLUS3A40PZCTBG attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6.4 A

Maximum Drain Current (ID):

6.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUS3A40PZCTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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