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NTLUS3A90PZCTBG

Onsemi

NTLUS3A90PZCTBG by Onsemi

NTLUS3A90PZCTBG by Onsemi is a P-CHANNEL transistor with 4A max drain current and 2.3W max power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150 °C. Ideal for surface mount configurations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,359 parts In-Stock

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Vyrian

USA . 1,099 parts In-Stock

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TANS Electronics

Latvia . 7,848 parts In-Stock

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Kulean Microsystems

USA . 7,357 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,551 parts In-Stock

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Problanco Electronics

Mexico . 3,782 parts In-Stock

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Corphita

USA . 1,891 parts In-Stock

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SupplyDigital Components

Austria . 1,856 parts In-Stock

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UHIMA Technologies

Türkiye . 571 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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Overview

Unleash the power of innovation with the NTLUS3A90PZCTBG by Onsemi. Crafted with precision and expertise, this P-CHANNEL transistor offers unparalleled performance and reliability in a variety of applications. From enhancing power systems to driving motor controls, this product is designed to exceed expectations. With a maximum drain current of 4 A and a maximum power dissipation of 2.3 W, the possibilities are endless. Trust Onsemi to deliver quality and value with every product, making your projects stand out from the rest.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have higher current-carrying capabilities and lower on-resistance compared to N-channel transistors, making them suitable for high-power applications.

Configuration: SINGLE

Single configuration transistors are easier to work with and integrate into circuits compared to dual or multiple configurations, simplifying circuit design.

Surface Mount: YES

Surface mount transistors are smaller in size and ideal for compact electronic devices, allowing for more efficient use of PCB space.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a positive voltage to turn on, providing better control over the switching operation in electronic circuits.

Maximum Drain Current (Abs) (ID): 4 A

The high maximum drain current rating allows the transistor to handle high levels of current, making it suitable for power applications.

Maximum Power Dissipation (Abs): 2.3 W

The high power dissipation rating ensures that the transistor can handle power efficiently without overheating, contributing to the reliability of the device.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics, such as high input impedance and low noise, making the transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures that the transistor can operate reliably in demanding environments without thermal issues, increasing its overall durability.

Terminal Finish: TIN

Tin terminal finish provides good solderability and resistance to oxidation, ensuring reliable connections and long-term performance of the transistor in electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature indicates good solderability and ease of manufacturing, allowing for efficient assembly of the transistor onto PCBs.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability ensures that the transistor can withstand the temperature demands of the manufacturing process, leading to reliable solder joints during assembly.

Technical Specifications

Other Function Transistors NTLUS3A90PZCTBG attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUS3A90PZCTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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