Loading...

NTLUS3A39PZCTBG

Onsemi

NTLUS3A39PZCTBG by Onsemi

NTLUS3A39PZCTBG by Onsemi is a P-CHANNEL transistor with 5.2A max drain current and 2.3W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems or industrial control circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,148 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,148

-

-

-

-

Digiode

USA . 456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

456

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 743 parts In-Stock

1+ parts

$22.090

100+ parts

-

1k+ parts

-

10k+ parts

-

743

$22.090

-

-

-

SupplyDigital Components

Austria . 5,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,759

-

-

-

-

Problanco Electronics

Mexico . 5,308 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,308

-

-

-

-

TANS Electronics

Latvia . 4,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,880

-

-

-

-

Kulean Microsystems

USA . 2,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,230

-

-

-

-

UHIMA Technologies

Türkiye . 747 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

747

-

-

-

-

Corohmni

South Africa . 274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

274

-

-

-

-

Corphita

USA . 128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

128

-

-

-

-

Overview

Unleash the power of innovation with the NTLUS3A39PZCTBG by Onsemi. Crafted with precision and expertise, this P-CHANNEL transistor offers unparalleled performance and reliability. Ideal for a wide range of applications, this enhancement mode transistor delivers seamless operation and maximum efficiency. Experience the value and benefits of this cutting-edge product, designed to elevate your projects to new heights. Trust Onsemi for quality you can depend on.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel transistors are commonly used in power management applications, offering low on-resistance and high efficiency.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Surface mount capability allows for easy integration into PCB designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have higher input impedance, lower leakage current, and improved stability compared to depletion mode transistors.

Maximum Drain Current (Abs) (ID): 5.2 A

High maximum drain current rating allows for handling of higher power loads.

Maximum Power Dissipation (Abs): 2.3 W

Low maximum power dissipation helps in keeping the component cool during operation, enhancing reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFETs are known for their high input impedance and fast switching speeds, making them suitable for various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable operation in a variety of environments.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures robust connections.

Maximum Time At Peak Reflow Temperature (s): 30

Extended time at peak reflow temperature allows for proper soldering without component damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and component reliability during assembly.

Technical Specifications

Other Function Transistors NTLUS3A39PZCTBG attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.2 A

Maximum Drain Current (ID):

5.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUS3A39PZCTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5