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FW907-TL-E

Onsemi

FW907-TL-E by Onsemi

FW907-TL-E by Onsemi is a N/P-channel MOSFET with 10A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150 °C. Ideal for various electronic circuits requiring high current switching capabilities.

Median Price

$1.375

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$1.350

1k+ parts

$1.120

10k+ parts

$0.999

5,000

-

$1.350

$1.120

$0.999

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.400

10k+ parts

$1.249

5,000

-

-

$1.400

$1.249

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,807 parts In-Stock

1+ parts

$1.054

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1,807

$1.054

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Vyrian

USA . 8,763 parts In-Stock

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8,763

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,120 parts In-Stock

1+ parts

$0.999

100+ parts

-

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2,120

$0.999

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Corohmni

South Africa . 77 parts In-Stock

1+ parts

$1.110

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77

$1.110

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Microchip USA

USA . 256 parts In-Stock

1+ parts

$6.890

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256

$6.890

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AZTECH Wire

Italy . 1,107 parts In-Stock

1+ parts

$12.760

100+ parts

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1,107

$12.760

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SupplyDigital Components

Austria . 8,004 parts In-Stock

1+ parts

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8,004

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TANS Electronics

Latvia . 5,676 parts In-Stock

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5,676

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

$0.998

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5,000

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$0.998

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Kulean Microsystems

USA . 4,990 parts In-Stock

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4,990

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Northwest PG Solutions

USA . 1,940 parts In-Stock

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1,940

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Problanco Electronics

Mexico . 1,319 parts In-Stock

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1,319

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Native Components

USA . 749 parts In-Stock

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749

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UHIMA Technologies

Türkiye . 186 parts In-Stock

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186

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Overview

Upgrade your electronic devices with the FW907-TL-E by Onsemi. Known for their high-quality manufacturing, Onsemi delivers top-of-the-line Other Function Transistors that guarantee reliability and performance. This N-CHANNEL AND P-CHANNEL transistor operates in enhancement mode, providing a maximum drain current of 10A and a maximum power dissipation of 2.5W. Perfect for a wide range of applications, this surface mount transistor offers superior functionality and efficiency. Trust Onsemi to provide you with the best components for your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit designs, providing options for different applications and requirements.

Surface Mount: YES

Being surface mountable makes it easier to integrate into compact designs and saves space on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers high gain and low on-resistance, making this transistor efficient in amplification applications.

Maximum Drain Current (Abs): 10 A

With a high maximum drain current, this transistor can handle heavy loads and is suitable for power applications.

Maximum Power Dissipation (Abs): 2.5 W

The high maximum power dissipation allows for the transistor to operate reliably without overheating, ensuring long-term performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good efficiency and low power consumption, making the transistor energy-efficient.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function in high-temperature environments without compromising performance.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish provides good solderability and reliability in various operating conditions, ensuring a secure connection.

Technical Specifications

Other Function Transistors FW907-TL-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

FW907-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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